UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes

Electronics letters, 2020-02, Vol.56 (4), p.199-201

2020

Volltextzugriff (PDF)

Hf0.5Zr0.5O2-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

Electronics letters, 2020-08, Vol.56 (16), p.840-843

2020

Volltextzugriff (PDF)

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Journal of materials science. Materials in electronics, 2019-06, Vol.30 (12), p.11079-11085

2019

Volltextzugriff (PDF)

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

Chinese physics B, 2014-08, Vol.23 (8), p.631-635

2014

Volltextzugriff (PDF)

PBTI stress-induced 1/f noise in n-channel FinFET

Chinese physics B, 2020-12, Vol.29 (12), p.128501

2020

Volltextzugriff (PDF)

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory

Chinese physics B, 2018-09, Vol.27 (9), p.98501

2018

Volltextzugriff (PDF)

Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell

Wuli xuebao, 2019-01, Vol.68 (3), p.38501

2019

Volltextzugriff (PDF)

Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes

Chinese physics letters, 2018-07, Vol.35 (7), p.78502

2018

Volltextzugriff (PDF)

Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node

Wuli xuebao, 2013, Vol.62 (20), p.208501

2013

Volltextzugriff (PDF)

Study on power characteristics of deep sub-micron SOI RF LDMOS

Wuli xuebao, 2011, Vol.60 (1), p.18501

2011

Volltextzugriff (PDF)

PBTI stress-induced 1/f noise in n-channel FinFETProject supported by the National Natural Science Foundation of China (Grant No. 61634008)

Chinese physics B, 2020-12, Vol.29 (12)

2020

Volltextzugriff (PDF)

Cryogenic Characterization of Nano-scale Bulk FinFETs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-3

2020

Volltextzugriff (PDF)

Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

Electronics letters, 2020-08, Vol.56 (16), p.840-843

2020

Volltextzugriff (PDF)

Total Ionization Dose Effects on Charge Storage Capability of Al 2 O 3 /HfO 2 /Al 2 O 3 -Based Charge Trapping Memory Cell

Chinese physics letters, 2018-11, Vol.35 (11), p.118501

2018

Volltextzugriff (PDF)

Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory CellSupported by the National Natural Science Foundation of China under Grant No 616340084, the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2014101, the International Cooperation Project of Chinese Academy of Sciences, and the Austrian-Chinese Cooperative R&D Projects under Grant No 172511KYSB20150006

Chinese physics letters, 2018-11, Vol.35 (11)

2018

Volltextzugriff (PDF)

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memoryProject supported by the National Natural Science Foundation of China (Grant No. 616340084), the Youth Innovation Promotion Association of CAS (Grant No. 2014101), the International Cooperation Project of CAS, and the Austrian-Chinese Cooperative R&D Projects (Grant No. 172511KYSB20150006)

Chinese physics B, 2018-09, Vol.27 (9)

2018

Volltextzugriff (PDF)

Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC ModesSupported by the National Natural Science Foundation of China under Grant No 616340084, the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2014101, and the Austrian-Chinese Cooperative R&D Projects of International Cooperation Project of Chinese Academy of Sciences under Grant No 172511KYSB20150006

Chinese physics letters, 2018-07, Vol.35 (7)

2018

Volltextzugriff (PDF)

Improved radiation response of PDSOI LBBC BUSFET

2010 International Workshop on Junction Technology Extended Abstracts, 2010, p.1-4

2010

Volltextzugriff (PDF)

Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit

Wuli xuebao, 2015, Vol.64 (13), p.136102

2015

Volltextzugriff (PDF)

The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.75-77

2006

Volltextzugriff (PDF)

28nm 4Mb 1T-1MTJ STT-MRAM Circuits with Ultra-low Power Read Scheme

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-3

2020

Volltextzugriff (PDF)

A global survey on the use of the international classification of diseases codes for metabolic dysfunction-associated fatty liver disease

Hepatology international, 2024-08, Vol.18 (4), p.1178-1201

2024

Volltextzugriff (PDF)

A Solvable Model in Two-Dimensional Gravity Coupled to a Nonlinear Matter Field

Communications in theoretical physics, 2001-01, Vol.35 (1), p.19-21

2001

Volltextzugriff (PDF)

Preliminary study on biological characteristics of CD(44)(+) stem cells in human laryngeal carcinoma

Zhonghua er bi yan hou tou jing wai ke za zhi = Chinese journal of otorhinolaryngology head and neck surgery, 2008-11, Vol.43 (11), p.845

2008

Volltextzugriff (PDF)

Structural and compositional optimization of advanced fan-in WLCSPs base on FEA simulation

2012 13th International Conference on Electronic Packaging Technology & High Density Packaging, 2012, p.25-28

2012

Volltextzugriff (PDF)

1 – 25 von 31

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(23)
Mit Volltextzugriff
(23)

Publikationsform

Artikel
(26)
Tagungsberichte
(5)

Sprache

Englisch
(25)
Chinesisch
(8)

Erscheinungsjahr

n.n

Thema

Science & Technology
(12)
Physical Sciences
(8)
Physics
(8)
Physics, Multidisciplinary
(8)
Engineering
(3)
Engineering, Electrical & Electronic
(3)
Mosfets
(3)
Technology
(3)
Annealing
(2)
Charge Collection
(2)
Cmos
(2)
Electric Potential
(2)
Electrical Properties
(2)
Finfet
(2)
Flash Memory
(2)
Heavy Ion
(2)
Integrated Circuits
(2)
Mobility Fluctuation
(2)
Pbti
(2)
Semiconductor Technology
(2)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IEEE Xplore
(8)
EZB Electronic Journals Library
(6)
Wiley-Blackwell Journals
(3)
Nexis Uni
(3)
Ingenta
(3)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(2)
SpringerLink
(2)
MEDLINE
(1)
Journals@Ovid Full Text
(1)

4 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes

Hf0.5Zr0.5O2-based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

PBTI stress-induced 1/f noise in n-channel FinFET

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory

Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell

Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes

Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node

Study on power characteristics of deep sub-micron SOI RF LDMOS

PBTI stress-induced 1/f noise in n-channel FinFETProject supported by the National Natural Science Foundation of China (Grant No. 61634008)

Cryogenic Characterization of Nano-scale Bulk FinFETs

Hf 0.5 Zr 0.5 O 2 ‐based ferroelectric bionic electronic synapse device with highly symmetrical and linearity weight modification

Total Ionization Dose Effects on Charge Storage Capability of Al 2 O 3 /HfO 2 /Al 2 O 3 -Based Charge Trapping Memory Cell

Improved radiation response of PDSOI LBBC BUSFET

Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit

The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier

28nm 4Mb 1T-1MTJ STT-MRAM Circuits with Ultra-low Power Read Scheme

A global survey on the use of the international classification of diseases codes for metabolic dysfunction-associated fatty liver disease

A Solvable Model in Two-Dimensional Gravity Coupled to a Nonlinear Matter Field

Preliminary study on biological characteristics of CD(44)(+) stem cells in human laryngeal carcinoma

Structural and compositional optimization of advanced fan-in WLCSPs base on FEA simulation

Suchergebnisse filtern