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Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

Micromachines (Basel), 2023-08, Vol.14 (9), p.1679

2023

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An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs

IEEE transactions on nuclear science, 2019-03, Vol.66 (3), p.625-634

2019

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Evaluation Method of Soil Surface Roughness after Ditching Operation Based on Wavelet Transform

Actuators, 2022-03, Vol.11 (3), p.87

2022

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Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

IEEE electron device letters, 2014-05, Vol.35 (5), p.503-505

2014

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Intelligent Driving Vehicle Object Detection Based on Improved AVOD Algorithm for the Fusion of LiDAR and Visual Information

Actuators, 2022-10, Vol.11 (10), p.272

2022

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Antibacterial hemostatic dressings with nanoporous bioglass containing silver

International journal of nanomedicine, 2012-01, Vol.7 (default), p.2613-2620

2012

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Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

Microelectronics and reliability, 2017-07, Vol.74, p.74-80

2017

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Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.683-688

2017

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Study on injectable and degradable cement of calcium sulphate and calcium phosphate for bone repair

Journal of materials science. Materials in medicine, 2010-02, Vol.21 (2), p.627-634

2010

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Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer

IEEE transactions on nuclear science, 2016-10, Vol.63 (5), p.2731-2737

2016

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Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs

IEEE transactions on nuclear science, 2015-02, Vol.62 (1), p.314-322

2015

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Investigation of unique total ionizing dose effects in 0.2µm partially-depleted silicon-on-insulator technology

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-05, Vol.745, p.128-132

2014

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A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4697-4704

2013

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Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs

Microelectronics and reliability, 2013-02, Vol.53 (2), p.259-264

2013

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Total ionizing dose effect in 0.2μm PDSOI NMOSFETs with shallow trench isolation

Microelectronics and reliability, 2014-04, Vol.54 (4), p.730-737

2014

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Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

IEEE transactions on nuclear science, 2013-04, Vol.60 (2), p.1354-1360

2013

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Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step }^ + Implantation

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1400-1406

2014

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Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1347-1354

2011

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Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1324-1331

2011

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Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

Microelectronics and reliability, 2012, Vol.52 (1), p.130-136

2012

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Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1332-1337

2011

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Radiation Hardening by Applying Substrate Bias

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1355-1360

2011

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Total ionizing dose effects in elementary devices for 180-nm flash technologies

Microelectronics and reliability, 2011-08, Vol.51 (8), p.1295-1301

2011

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Lightweight environment sensing algorithm for intelligent driving based on improved YOLOv7

IET control theory & applications, 2024-06

2024

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Analysis of bias effects on the total ionizing dose response in a 180nm technology

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2011-07, Vol.644 (1), p.48-54

2011

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Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs

Evaluation Method of Soil Surface Roughness after Ditching Operation Based on Wavelet Transform

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Intelligent Driving Vehicle Object Detection Based on Improved AVOD Algorithm for the Fusion of LiDAR and Visual Information

Antibacterial hemostatic dressings with nanoporous bioglass containing silver

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node

Study on injectable and degradable cement of calcium sulphate and calcium phosphate for bone repair

Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer

Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs

Investigation of unique total ionizing dose effects in 0.2µm partially-depleted silicon-on-insulator technology

A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs

Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs

Total ionizing dose effect in 0.2μm PDSOI NMOSFETs with shallow trench isolation

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step }^ + Implantation

Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation

Radiation Hardening by Applying Substrate Bias

Total ionizing dose effects in elementary devices for 180-nm flash technologies

Lightweight environment sensing algorithm for intelligent driving based on improved YOLOv7

Analysis of bias effects on the total ionizing dose response in a 180nm technology

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