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The restoration of root filled teeth: a review of the clinical literature

International endodontic journal, 2021-04, Vol.54 (4), p.509-535

2021

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External cervical resorption: part 2 – management

International endodontic journal, 2018-11, Vol.51 (11), p.1224-1238

2018

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Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.327-332

2022

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Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2719-2725

2011

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Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1008-1014

2011

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Impact of Technology Scaling on SRAM Soft Error Rates

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3512-3518

2014

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SE Performance of D-FF Designs With Different V T Options at Near-Threshold Supply Voltages in 7-nm Bulk FinFET Technology

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1582-1586

2022

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Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1-1

2023

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3253-3258

2006

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Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3050-3056

2009

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Single-Event Latchup in a 7-nm Bulk FinFET Technology

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.830-834

2021

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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4368-4373

2013

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Bias Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4476-4482

2013

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Impact of Supply Voltage and Frequency on the Soft Error Rate of Logic Circuits

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4200-4206

2013

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Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3380-3385

2010

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Frequency Dependence of Alpha-Particle Induced Soft Error Rates of Flip-Flops in 40-nm CMOS Technology

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2796-2802

2012

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Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1427-1432

2019

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The use of limited cone beam computed tomography in the diagnosis and management of a case of perforating internal root resorption

International endodontic journal, 2011-08, Vol.44 (8), p.777-786

2011

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An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology

IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.3003-3009

2016

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The comparative effectiveness and safety of three activated irrigation techniques in the isthmus area using a transparent tooth model

International endodontic journal, 2018-01, Vol.51 (S1), p.e35-e41

2018

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Multi-Cell Soft Errors at Advanced Technology Nodes

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2585-2591

2015

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2748-2755

2012

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An Empirical Model for Predicting SE Cross Section for Combinational Logic Circuits in Advanced Technologies

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.304-310

2018

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The restoration of root filled teeth: a review of the clinical literature

External cervical resorption: part 2 – management

Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node

Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

Impact of Technology Scaling on SRAM Soft Error Rates

SE Performance of D-FF Designs With Different V T Options at Near-Threshold Supply Voltages in 7-nm Bulk FinFET Technology

Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

Single-Event Latchup in a 7-nm Bulk FinFET Technology

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

Bias Dependence of Total-Dose Effects in Bulk FinFETs

Impact of Supply Voltage and Frequency on the Soft Error Rate of Logic Circuits

Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages

The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

Frequency Dependence of Alpha-Particle Induced Soft Error Rates of Flip-Flops in 40-nm CMOS Technology

Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET

Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage

The use of limited cone beam computed tomography in the diagnosis and management of a case of perforating internal root resorption

An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology

The comparative effectiveness and safety of three activated irrigation techniques in the isthmus area using a transparent tooth model

Multi-Cell Soft Errors at Advanced Technology Nodes

On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

An Empirical Model for Predicting SE Cross Section for Combinational Logic Circuits in Advanced Technologies

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