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Effect of Oxygen Deposition Pressure on the Structure and the Metal Insulator Transition in Pulsed Laser Deposited VO2 Films on Soda Lime Glass

American journal of nanomaterials (Print), 2017-10, Vol.5 (2), p.59-67

2017

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Thermal induced tunability of surface plasmon resonance in Au–VO2 nano-photonics

Optics communications, 2005-10, Vol.254 (1-3), p.188-195

2005

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Surface Plasmon Resonance Tunability in Au−VO2 Thermochromic Nano-composites

Gold Bulletin, 2005-01, Vol.38 (3), p.100-106

2005

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Growth of a-axis Textured Pulsed Laser Deposited VO2 Nanostructures on Glass Substrate

American journal of nanomaterials (Print), 2018-06, Vol.6 (1), p.24-33

2018

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Induced structural damages by He + irradiation in conducting transparent indium–tin oxide thin films

Solar energy materials and solar cells, 2006-01, Vol.90 (1), p.111-119

2006

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Thickness induced transversal percolation in Pt-Al2O3 nano-composites

Solid state communications, 2006, Vol.137 (3), p.166-170

2006

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3-D modelling of a bilayer heterojunction organic solar cell based on copper phthalocyanine and fullerene (CUPC/C60): Evidence of total excitons dissociation at the donor-acceptor interface

Global journal of pure and applied sciences, 2013-07, Vol.19 (1), p.41

2013

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Inhomogeneous Model for the Investigation of the Optical Properties of the A-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy

Journal of Lasers, Optics & Photonics, 2018, Vol.5 (2)

2018

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Characterization of processing-induced defects in high-purity InP by photoluminescence

Journal of applied physics, 1992-08, Vol.72 (3), p.1080-1085

1992

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Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

Journal of applied physics, 1991-02, Vol.69 (3), p.1613-1617

1991

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High-energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: Formation of multiple shallow emissions

Applied physics letters, 1995-11, Vol.67 (19), p.2845-2847

1995

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Nature of the 1.5040-1.5110-eV emission band in GaAs

Journal of applied physics, 1985-01, Vol.58 (9), p.3549-3555

1985

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Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic

Applied physics letters, 1988-05, Vol.52 (19), p.1596-1598

1988

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Photoluminescence from InP heavily ion-implanted with Mg

Materials science & engineering. B, Solid-state materials for advanced technology, 1991-07, Vol.9 (1), p.319-323

1991

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Shallow-acceptor isoelectronic-impurity complexes in GaAs

Solid state communications, 1988-09, Vol.67 (12), p.1239-1243

1988

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Excited-state spectroscopy of identified Mg acceptor in InP

Applied physics letters, 1990-01, Vol.56 (4), p.349-351

1990

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Formation of Radiative Binding States for the Pairs Between Acceptors in Heavily Acceptor-Doped Gaas

MRS proceedings, 1989, Vol.145, Article 493

1989

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Electronic structure of molecular-beam-epitaxy growth-induced defects in GaAs

Physical review. B, Condensed matter, 1988-03, Vol.37 (9), p.4514-4527

1988

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Responding for sucrose and wheel-running reinforcement: effect of D-amphetamine

Behavioural pharmacology, 2005-07, Vol.16 (4), p.219-225

2005

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Effect of Oxygen Deposition Pressure on the Structure and the Metal Insulator Transition in Pulsed Laser Deposited VO2 Films on Soda Lime Glass

Thermal induced tunability of surface plasmon resonance in Au–VO2 nano-photonics

Surface Plasmon Resonance Tunability in Au−VO2 Thermochromic Nano-composites

Growth of a-axis Textured Pulsed Laser Deposited VO2 Nanostructures on Glass Substrate

Induced structural damages by He + irradiation in conducting transparent indium–tin oxide thin films

Thickness induced transversal percolation in Pt-Al2O3 nano-composites

3-D modelling of a bilayer heterojunction organic solar cell based on copper phthalocyanine and fullerene (CUPC/C60): Evidence of total excitons dissociation at the donor-acceptor interface

Inhomogeneous Model for the Investigation of the Optical Properties of the A-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy

Characterization of processing-induced defects in high-purity InP by photoluminescence

Influence of the implantation of C+ ions on photoluminescence and electrical properties of GaAs

High-energy implantation of Hg+ ions into GaAs grown by liquid encapsulated Czochralski method: Formation of multiple shallow emissions

Nature of the 1.5040-1.5110-eV emission band in GaAs

Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic

Photoluminescence from InP heavily ion-implanted with Mg

Shallow-acceptor isoelectronic-impurity complexes in GaAs

Excited-state spectroscopy of identified Mg acceptor in InP

Formation of Radiative Binding States for the Pairs Between Acceptors in Heavily Acceptor-Doped Gaas

Electronic structure of molecular-beam-epitaxy growth-induced defects in GaAs

Responding for sucrose and wheel-running reinforcement: effect of D-amphetamine

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