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Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

Journal of applied physics, 2019-07, Vol.126 (4)

2019

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Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

Journal of crystal growth, 2021-04, Vol.560-561, p.126033, Article 126033

2021

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Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Journal of crystal growth, 2015-10, Vol.427, p.99-103

2015

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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Journal of crystal growth, 2011, Vol.314 (1), p.21-29

2011

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Selective etching of dislocations in GaN grown by low-pressure solution growth

Journal of crystal growth, 2010-10, Vol.312 (20), p.3040-3045

2010

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Formation of CuInSe2 by the annealing of stacked elemental layers: analysis by in situ high-energy powder diffraction

Thin solid films, 2003-08, Vol.437 (1-2), p.297-307

2003

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Application of a thermogravimetric technique for the determination of low nitrogen solubilities in metals: Using iron as an example

Thermochimica acta, 2008-08, Vol.474 (1), p.36-40

2008

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Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch

Journal of crystal growth, 2008-02, Vol.310 (4), p.738-747

2008

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Phase relations in the ternary Cu–Ga–In system

Thin solid films, 2007-05, Vol.515 (15), p.5895-5898

2007

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Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.299-302, Article 299

2010

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On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN

Journal of crystal growth, 2008-12, Vol.311 (1), p.62-65

2008

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Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Journal of crystal growth, 2006-01, Vol.287 (2), p.408-413

2006

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Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Journal of crystal growth, 2007-07, Vol.305 (2), p.326-334

2007

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Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

Journal of crystal growth, 2013-10, Vol.381, p.127-133

2013

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In situ resistivity measurements of precursor reactions in the Cu–In–Ga system

Thin solid films, 2003-05, Vol.431 (1-2), p.41-45

2003

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Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN

Journal of crystal growth, 2006-12, Vol.297 (1), p.133-137

2006

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Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

Crystal research and technology (1979), 2008-01, Vol.43 (1), p.14-21

2008

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Computer-assisted growth of low-EPD GaAs with 3″ diameter by the vertical gradient-freeze technique

Journal of crystal growth, 1999-03, Vol.198, p.361-366

1999

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Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Solid state phenomena, 2015-10, Vol.242, p.484-489

2015

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In situ resistivity measurements of precursor reactions in the Cu-In-Ga system

Thin solid films, 2003-05, Vol.431-432 (Complete), p.41-45

2003

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Kinetics of the reactive crystallization of CuInSe 2 and CuGaSe 2 chalcopyrite films for solar cell applications

Journal of crystal growth, 2006, Vol.287 (2), p.408-413

2006

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Crystal growth of compound semiconductors with low dislocation densities

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-6

2008

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Formation of CuInSe 2 by the annealing of stacked elemental layers—analysis by in situ high-energy powder diffraction

Thin solid films, 2003, Vol.437 (1), p.297-307

2003

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In situ resistivity measurements of precursor reactions in the Cu-In-Ga system

Thin solid films, 2003, Vol.431-32, p.41-45

2003

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Computer-assisted growth of low-EPD GaAs with 3 diameter by the vertical gradient-freeze technique

Journal of crystal growth, 1999, Vol.198-99, p.361-366

1999

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Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Selective etching of dislocations in GaN grown by low-pressure solution growth

Formation of CuInSe2 by the annealing of stacked elemental layers: analysis by in situ high-energy powder diffraction

Application of a thermogravimetric technique for the determination of low nitrogen solubilities in metals: Using iron as an example

Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch

Phase relations in the ternary Cu–Ga–In system

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN

Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

In situ resistivity measurements of precursor reactions in the Cu–In–Ga system

Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN

Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

Computer-assisted growth of low-EPD GaAs with 3″ diameter by the vertical gradient-freeze technique

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

In situ resistivity measurements of precursor reactions in the Cu-In-Ga system

Kinetics of the reactive crystallization of CuInSe 2 and CuGaSe 2 chalcopyrite films for solar cell applications

Crystal growth of compound semiconductors with low dislocation densities

Formation of CuInSe 2 by the annealing of stacked elemental layers—analysis by in situ high-energy powder diffraction

In situ resistivity measurements of precursor reactions in the Cu-In-Ga system

Computer-assisted growth of low-EPD GaAs with 3 diameter by the vertical gradient-freeze technique

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