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Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

Solar energy materials and solar cells, 2016-04, Vol.147, p.53-60

2016

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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Journal of applied physics, 2013-03, Vol.113 (12)

2013

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Journal of crystal growth, 2013-10, Vol.380, p.157-162

2013

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Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells

Journal of physics. Condensed matter, 2016-07, Vol.28 (28), p.284002-284002

2016

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MBE growth and doping of AlGaP

Journal of crystal growth, 2017-05, Vol.466, p.6-15

2017

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Journal of crystal growth, 2011-05, Vol.323 (1), p.409-412

2011

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Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Applied surface science, 2012-01, Vol.258 (7), p.2808-2815

2012

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Nitrogen–phosphorus competition in the molecular beam epitaxy of GaPN

Journal of crystal growth, 2013-08, Vol.377, p.17-21

2013

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Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Applied physics letters, 2007-04, Vol.101 (8), p.081707-081707-6

2007

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Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Applied physics letters, 2001-03, Vol.78 (12), p.1751-1753

2001

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Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

Thin solid films, 2013-08, Vol.541, p.36-40

2013

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Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

Journal of applied physics, 2011-05, Vol.109 (10), p.102413-102413-6

2011

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Strong generation of coherent acoustic phonons in semiconductor quantum dots

Physical review letters, 2007-05, Vol.98 (20), p.207402-207402, Article 207402

2007

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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Journal of crystal growth, 2013-09, Vol.378, p.25-28

2013

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Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

Acta materialia, 2010-05, Vol.58 (9), p.3238-3246

2010

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Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Nanotechnology, 2011-02, Vol.22 (5), p.055703-055703

2011

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Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2007-08, Vol.91 (7)

2007

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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-06, Vol.177 (11), p.882-886

2012

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Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Applied physics letters, 2007-12, Vol.91 (26)

2007

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Wavelength tuning of InAs quantum dots grown on (311)B InP

Applied physics letters, 1999-05, Vol.74 (22), p.3356-3358

1999

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Journal of crystal growth, 2005-01, Vol.273 (3), p.357-362

2005

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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Journal of crystal growth, 2003-04, Vol.251 (1), p.230-235

2003

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Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells

High-gain and low-threshold InAs quantum-dot lasers on InP

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells

MBE growth and doping of AlGaP

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Nitrogen–phosphorus competition in the molecular beam epitaxy of GaPN

Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

Strong generation of coherent acoustic phonons in semiconductor quantum dots

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Wavelength tuning of InAs quantum dots grown on (311)B InP

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

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