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Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Applied physics letters, 2012-11, Vol.101 (19)

2012

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A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 Stacks

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2878-2887

2011

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Metal oxide resistive memory switching mechanism based on conductive filament properties

Journal of applied physics, 2011-12, Vol.110 (12), p.124518-124518-12

2011

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White-light-induced disruption of nanoscale conducting filament in hafnia

Applied physics letters, 2015-08, Vol.107 (7)

2015

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Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Microelectronic engineering, 2013-09, Vol.109, p.75-78

2013

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Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Applied physics letters, 2012-03, Vol.100 (12)

2012

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Grain boundary-driven leakage path formation in HfO2 dielectrics

Solid-state electronics, 2011-11, Vol.65-66, p.146-150

2011

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Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2

Physical review letters, 2007-10, Vol.99 (15), p.155504-155504

2007

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

Volltextzugriff (PDF)

Signal duration sensitive degradation in scaled devices

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

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Grain boundary mediated leakage current in polycrystalline HfO2 films

Microelectronic engineering, 2011-07, Vol.88 (7), p.1272-1275

2011

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The role of nitrogen-related defects in high- k dielectric oxides: Density-functional studies

Journal of applied physics, 2005-03, Vol.97 (5), p.053704-053704-13

2005

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied physics letters, 2008-03, Vol.92 (9)

2008

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The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Journal of applied physics, 2006-11, Vol.100 (9), p.094108-094108-6

2006

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Extraction of interface state density in oxide III-V gate stacks

Semiconductor science and technology, 2015-06, Vol.30 (6), p.65013

2015

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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

IEEE electron device letters, 2016-05, Vol.37 (5), p.640-643

2016

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Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

Journal of applied physics, 2006-01, Vol.99 (2)

2006

Volltextzugriff (PDF)

Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress

IEEE electron device letters, 2008-02, Vol.29 (2), p.180-182

2008

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Electron Trap Transformation Under Positive-Bias Temperature Stressing

IEEE electron device letters, 2013-03, Vol.34 (3), p.351-353

2013

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Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

IEEE electron device letters, 2009-08, Vol.30 (8), p.882-884

2009

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Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

IEEE electron device letters, 2011-03, Vol.32 (3), p.255-257

2011

Volltextzugriff (PDF)

Bimodal Weibull Distribution of Metal/High- \kappa Gate Stack TDDB-Insights by Scanning Tunneling Microscopy

IEEE electron device letters, 2012-02, Vol.33 (2), p.146-148

2012

Volltextzugriff (PDF)

CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

IEEE transactions on nanotechnology, 2016-11, Vol.15 (6), p.986-992

2016

Volltextzugriff (PDF)

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P36-1-P36-4

2022

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Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 Stacks

Metal oxide resistive memory switching mechanism based on conductive filament properties

White-light-induced disruption of nanoscale conducting filament in hafnia

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Grain boundary-driven leakage path formation in HfO2 dielectrics

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Signal duration sensitive degradation in scaled devices

Grain boundary mediated leakage current in polycrystalline HfO2 films

The role of nitrogen-related defects in high- k dielectric oxides: Density-functional studies

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

Extraction of interface state density in oxide III-V gate stacks

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress

Electron Trap Transformation Under Positive-Bias Temperature Stressing

Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Bimodal Weibull Distribution of Metal/High- \kappa Gate Stack TDDB-Insights by Scanning Tunneling Microscopy

CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics

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