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Increasing Social Work Students' Political Interest and Efficacy

Journal of policy practice, 2016-10, Vol.15 (4), p.289-313

Bernklau Halvor, Christie D.

2016

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Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

Applied physics letters, 2000-02, Vol.76 (8), p.1030-1032

2000

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Giant acoustoelectric effect in GaAs/LiNbO3 hybrids

Applied physics letters, 1998-10, Vol.73 (15), p.2128-2130

1998

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High power CW operation of InGaAsN lasers at 1.3 mu m

Electronics letters, 1999-09, Vol.35 (19), p.1643-1644

1999

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Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

Journal of applied physics, 2002-08, Vol.92 (3), p.1380-1385

2002

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Growth of high quality InGaAsN heterostructures and their laser application

Journal of crystal growth, 2001-07, Vol.227, p.545-552

2001

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Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures

Applied physics letters, 1999-08, Vol.75 (7), p.965-967

1999

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Self‐Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

physica status solidi (b), 2001-04, Vol.224 (3), p.839-843

2001

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Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

physica status solidi (b), 2001-04, Vol.224 (3), p.839-843

2001

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High power CW operation of InGaAsN lasers at 1.3 [micro sign]m

Electronics letters, 1999, Vol.35 (19), p.1643

1999

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Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers

Applied physics letters, 1996-01, Vol.68 (2), p.156-158

1996

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Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers

Applied physics letters, 1997-12, Vol.71 (26), p.3761-3763

1997

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Pump geometry for resonant and quasi-resonant optical excitation of microcavity lasers

Optics letters, 1998-06, Vol.23 (11), p.849

1998

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Temperature dependence of the minimum V/III ratio for the growth of InxGa1-xAs

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.575-578

1993

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Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers

physica status solidi (b), 1997-11, Vol.204 (1), p.548-551

1997

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High performance resonant tunneling structures on GaAs substrates

Electronics letters, 1990-03, Vol.26 (5), p.340-342

1990

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MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness

Journal of crystal growth, 1991-05, Vol.111 (1), p.1100-1104

1991

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Carrier mobilities in graded In x Ga1− x As/Al0.2Ga0.8As quantum wells for high electron mobility transistors

Journal of applied physics, 1996-07, Vol.80 (1), p.322-325

1996

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Temperature dependence of the minimum V/III ratio for the growth of In xGa 1-xAs

Journal of crystal growth, 1993, Vol.127 (1), p.575-578

1993

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Temperature dependence of the minimum V/III ratio for the growth of In sub(x)Ga sub(1-x)As

Journal of crystal growth, 1993-01, Vol.127 (1-4), p.575-578

1993

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Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

Physica status solidi. B. Basic research, 2001, Vol.224 (3), p.839-843

2001

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Growth of high quality InGaAsN heterostructures and their laser application

Journal of crystal growth, 2001, Vol.227-28, p.545-552

2001

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Significantly enhanced SAW transmission in voltage tunable GaAs/LiNbO/sub 3/ hybrid devices

1998 IEEE Ultrasonics Symposium. Proceedings (Cat. No. 98CH36102), 1998, Vol.1, p.69-72 vol.1

1998

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Quasi-monolithic GaAs/LiNbO/sub 3/-hybrids for acoustoelectric applications

1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118), 1997, Vol.1, p.201-204 vol.1

1997

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Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009), 1999, Vol.1, p.368-369 vol.1

1999

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Increasing Social Work Students' Political Interest and Efficacy

Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

Giant acoustoelectric effect in GaAs/LiNbO3 hybrids

High power CW operation of InGaAsN lasers at 1.3 mu m

Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

Growth of high quality InGaAsN heterostructures and their laser application

Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures

Self‐Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

High power CW operation of InGaAsN lasers at 1.3 [micro sign]m

Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers

Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers

Pump geometry for resonant and quasi-resonant optical excitation of microcavity lasers

Temperature dependence of the minimum V/III ratio for the growth of InxGa1-xAs

Influence of Carrier Cooling on the Emission Dynamics of Semiconductor Microcavity Lasers

High performance resonant tunneling structures on GaAs substrates

MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness

Carrier mobilities in graded In x Ga1− x As/Al0.2Ga0.8As quantum wells for high electron mobility transistors

Temperature dependence of the minimum V/III ratio for the growth of In xGa 1-xAs

Temperature dependence of the minimum V/III ratio for the growth of In sub(x)Ga sub(1-x)As

Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

Growth of high quality InGaAsN heterostructures and their laser application

Significantly enhanced SAW transmission in voltage tunable GaAs/LiNbO/sub 3/ hybrid devices

Quasi-monolithic GaAs/LiNbO/sub 3/-hybrids for acoustoelectric applications

Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

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