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Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (4), p.45102

2020

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H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

Applied physics letters, 2017-03, Vol.110 (13)

2017

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High‑k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

ACS omega, 2023-08, Vol.8 (33), p.29939-29948

2023

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Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

ACS applied materials & interfaces, 2018-07, Vol.10 (29), p.24590-24597

2018

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Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method

ACS omega, 2024-08, Vol.9 (32), p.34735-34742

2024

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Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Journal of physics. D, Applied physics, 2023-10, Vol.56 (40), p.405114

2023

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Degradation due to photo-induced electron in Top-gate In-Ga-Zn-O Thin Film Transistors with n- region under Negative Bias Stress and Light Irradiation

IEEE electron device letters, 2023-05, Vol.44 (5), p.1-1

2023

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

ACS applied electronic materials, 2020-08, Vol.2 (8), p.2398-2407

2020

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High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

AIP advances, 2018-09, Vol.8 (9), p.095001-095001-8

2018

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Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

Journal of physics. D, Applied physics, 2022-02, Vol.55 (7), p.75102

2022

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22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.276-279

2024

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Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Nanotechnology, 2021-01, Vol.32 (5), p.055702-055702

2021

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Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation

Journal of display technology, 2016-03, Vol.12 (3), p.263-267

2016

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30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.422-425

2019

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Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Applied physics letters, 2018-05, Vol.112 (21)

2018

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Highly reliable photosensitive organic-inorganic hybrid passivation layers for a -InGaZnO thin-film transistors

Applied physics letters, 2015-07, Vol.107 (3)

2015

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Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90502

2019

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Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors

AIP advances, 2016-06, Vol.6 (6), p.065216-065216-10

2016

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Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation

IEEE electron device letters, 2020-09, Vol.41 (9), p.1372-1375

2020

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Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2O x )

ACS applied electronic materials, 2022-12, Vol.4 (12), p.5838-5846

2022

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Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

Applied physics letters, 2018-05, Vol.112 (19)

2018

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Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors

Japanese Journal of Applied Physics, 2018-09, Vol.57 (9), p.90306

2018

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Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors

Materials science in semiconductor processing, 2022-08, Vol.146, p.106669, Article 106669

2022

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P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1333-1336

2019

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Effect of contact material on amorphous InGaZnO thin-film transistor characteristics

Japanese Journal of Applied Physics, 2014-03, Vol.53 (3S1), p.3-1-03CC04-5

2014

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Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

High‑k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a‑InGaZnO at 45 °C

Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method

Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment

Degradation due to photo-induced electron in Top-gate In-Ga-Zn-O Thin Film Transistors with n- region under Negative Bias Stress and Light Irradiation

High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation

30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a -InGaZnO thin-film transistors

Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression

Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors

Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation

Machine-Learned Fermi Level Prediction of Solution-Processed Ultrawide-Bandgap Amorphous Gallium Oxide (a-Ga2O x )

Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

Photosensitive polysiloxane passivation fabricated at low temperature for highly reliable amorphous InGaZnO thin-film transistors

Spray pyrolyzed fluorinated inorganic-organic passivation for solution-processed a-InZnO thin-film transistors

P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient

Effect of contact material on amorphous InGaZnO thin-film transistor characteristics

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