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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Energetics of Self-Interstitial Clusters in Si

Physical review letters, 1999-05, Vol.82 (22), p.4460-4463

1999

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Applicabilities of the Warren-Averbach analysis and an alternative analysis for separation of size and strain broadening

Journal of applied crystallography, 1994-06, Vol.27 (3), p.345-357

1994

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Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

Applied physics letters, 2000-02, Vol.76 (7), p.855-857

2000

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The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures

Journal of applied physics, 2004-12, Vol.96 (12), p.7568-7573

2004

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Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1061-1064

2006

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Boride-enhanced diffusion in silicon: Bulk and surface layers

Applied physics letters, 1999-07, Vol.75 (2), p.181-183

1999

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Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

Applied physics letters, 2001-02, Vol.78 (7), p.889-891

2001

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Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

Applied physics letters, 2005-02, Vol.86 (8), p.081917-081917-3

2005

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Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions

Journal of applied physics, 2001-02, Vol.89 (3), p.1965-1972

2001

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Si interstitial contribution of F + implants in crystalline Si

Journal of applied physics, 2008-05, Vol.103 (9), p.093538-093538-4

2008

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Diffraction-Line Broadening due to Strain Fields in Materials; Fundamental Aspects and Methods of Analysis

Acta crystallographica. Section A, Foundations of crystallography, 1996-09, Vol.52 (5), p.730-747

1996

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Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.402-407

2008

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High hole mobilities in fully-strained Si(1-x)Ge(x ) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1826-1832

2001

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F+ implants in crystalline Si: the Si interstitial contribution

MRS proceedings, 2008, Vol.1070, Article 1070-E06-07

2008

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Selective versus non-selective growth of Si and SiGe

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.67 (1), p.46-52

1999

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Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3<x<0.4) grown on Si

Journal of applied physics, 2000-08, Vol.88 (4), p.2016-2023

2000

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Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

Applied physics letters, 2000-04, Vol.76 (14), p.1887-1889

2000

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High hole mobilities in fully-strained Si sub(1-x)Ge sub(x) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1826-1832

2001

Volltextzugriff (PDF)

Characterization of Deformation Fields around Misfitting Inclusions in Solids by Means of Diffraction Line Broadening

Physica status solidi. A, Applied research, 1992-12, Vol.134 (2), p.335-350

1992

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Quantitative depth profiling of SiOxNy layers on Si

Applied surface science, 2003, Vol.203-04, p.414-417

2003

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Ultrashallow Junction Formation and Gate Activation in Deep-Submicron CMOS

MRS proceedings, 2000, Vol.610, Article B3.1

2000

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The in vitro mechanisms and in vivo efficacy of intravenous lidocaine on the neuroinflammatory response in acute and chronic pain

European journal of pain, 2016-05, Vol.20 (5), p.655-674

2016

Volltextzugriff (PDF)

Retrieval and Unification of Syntactic Structure in Sentence Comprehension: an fMRI Study Using Word-Category Ambiguity

Cerebral cortex (New York, N.Y. 1991), 2009-07, Vol.19 (7), p.1493-1503

2009

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Room-Temperature Migration of Ion-Implanted Boron in Silicon

MRS proceedings, 1997, Vol.469, Article 53

1997

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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Energetics of Self-Interstitial Clusters in Si

Applicabilities of the Warren-Averbach analysis and an alternative analysis for separation of size and strain broadening

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures

Electrical and structural characterization of PLD grown CeO2-HfO2 laminated high-k gate dielectrics

Boride-enhanced diffusion in silicon: Bulk and surface layers

Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon

Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions

Si interstitial contribution of F + implants in crystalline Si

Diffraction-Line Broadening due to Strain Fields in Materials; Fundamental Aspects and Methods of Analysis

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

High hole mobilities in fully-strained Si(1-x)Ge(x ) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

F+ implants in crystalline Si: the Si interstitial contribution

Selective versus non-selective growth of Si and SiGe

Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3<x<0.4) grown on Si

Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

High hole mobilities in fully-strained Si sub(1-x)Ge sub(x) layers (0.3 < x < 0.4) and their significance for SiGe pMOSFET performance

Characterization of Deformation Fields around Misfitting Inclusions in Solids by Means of Diffraction Line Broadening

Quantitative depth profiling of SiOxNy layers on Si

Ultrashallow Junction Formation and Gate Activation in Deep-Submicron CMOS

The in vitro mechanisms and in vivo efficacy of intravenous lidocaine on the neuroinflammatory response in acute and chronic pain

Retrieval and Unification of Syntactic Structure in Sentence Comprehension: an fMRI Study Using Word-Category Ambiguity

Room-Temperature Migration of Ion-Implanted Boron in Silicon

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