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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.243-248

2024

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Spin transport and precession in graphene measured by nonlocal and three-terminal methods

Applied physics letters, 2014-05, Vol.104 (19), p.192403

2014

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Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

IEEE electron device letters, 2015-06, Vol.36 (6), p.537-539

2015

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A power detector based on GaN high-electron-mobility transistors for a gigabit on-off keying demodulator at 90 GHz

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD19

2019

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Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.333-338

2016

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Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

IEEE electron device letters, 2022-07, Vol.43 (7), p.1029-1032

2022

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Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2297-2303

2020

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Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Scientific reports, 2014-08, Vol.4 (1), p.6146-6146, Article 6146

2014

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Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.908-914

2018

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Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

IEEE transactions on electron devices, 2024, p.1-7

2024

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2446-2453

2018

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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2162-2169

2015

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Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN x Passivations for Microwave GaN HEMTs

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.908-914

2018

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Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low- Noise Amplifiers Operation

IEEE electron device letters, 2017-07, Vol.38 (7), p.926-928

2017

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Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Applied physics letters, 2018-12, Vol.113 (23)

2018

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Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Applied physics letters, 2015-12, Vol.107 (26), p.262105

2015

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Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

IEEE transactions on microwave theory and techniques, 2018-10, Vol.66 (10), p.4430-4438

2018

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Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Semiconductor science and technology, 2015-09, Vol.30 (10), p.105034

2015

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A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95019

2018

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Molecular phylogeny of Lymantriinae (Lepidoptera, Noctuoidea, Erebidae) inferred from eight gene regions

Cladistics, 2015-12, Vol.31 (6), p.579-592

2015

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Buffer Related Dispersive Effects in Microwave GaN HEMTs

Bergsten, Johan

2018

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Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

Microelectronics and reliability, 2017-01, Vol.68, p.2-4

2017

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A GaN–SiC hybrid material for high-frequency and power electronics

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

A power detector based on GaN high-electron-mobility transistors for a gigabit on-off keying demodulator at 90 GHz

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiN x Passivations for Microwave GaN HEMTs

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low- Noise Amplifiers Operation

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Molecular phylogeny of Lymantriinae (Lepidoptera, Noctuoidea, Erebidae) inferred from eight gene regions

Buffer Related Dispersive Effects in Microwave GaN HEMTs

Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

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