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Townsend discharge in argon and nitrogen: Study of the electron distribution function

Journal of applied physics, 2019-11, Vol.126 (17)

2019

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Generation of Terahertz Radiation under the Femtosecond Laser Excitation of a Multilayer Structure Based on a-Si:H/a-SiC:H/c-Si

JETP letters, 2022-12, Vol.116 (12), p.859-862

2022

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Application of silicon zig-zag wall arrays for anodes of Li-ion batteries

Semiconductor science and technology, 2016-01, Vol.31 (1), p.14008

2016

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Spin-galvanic effect due to optical spin orientation in n -type GaAs quantum well structures

Physical review. B, Condensed matter, 2003-08, Vol.68 (8), Article 081302

2003

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Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1315-1319

2020

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Negative Electrodes for Lithium-Ion Batteries Obtained by Photoanodization of Solar-Grade Silicon

Technical physics, 2019-05, Vol.64 (5), p.660-665

2019

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Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures

Journal of applied physics, 2009-01, Vol.105 (1)

2009

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Comparative study of noise in low-current Townsend discharge in nitrogen and argon

Physical review. E, 2017-04, Vol.95 (4-1), p.043206-043206, Article 043206

2017

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Control of the breakdown delay time in a micro-discharge system by small dc bias current

Journal of physics. D, Applied physics, 2008-07, Vol.41 (13), p.135502-135502 (7)

2008

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Resonant inversion of the circular photogalvanic effect in n -doped quantum wells

Physical review. B, Condensed matter, 2003-07, Vol.68 (3), Article 035319

2003

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Control of cadmium vapor pressure at growth and annealing of CdZnTe:Cl crystals with variable content of zinc for nuclear detectors

Physica status solidi. C, 2010-06, Vol.7 (6), p.1466-1469

2010

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Electrical and Photoelectric Properties of [alpha]-Si/SiO.sub.2 and [alpha]-Ge/SiO.sub.2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1315

2020

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Dynamics of the Townsend discharge in argon

Technical physics, 2015-05, Vol.60 (5), p.660-664

2015

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Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

Solid state phenomena, 2005-12, Vol.108-109, p.401-406

2005

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Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

Semiconductors (Woodbury, N.Y.), 2011-01, Vol.45 (1), p.1-20

2011

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Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.464-466

1999

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Polymorphism of condensed phase of dissipative solitons

Technical physics letters, 2010-07, Vol.36 (7), p.629-631

2010

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Control of the breakdown delay time in a micro-discharge system by small dc bias current

Journal of physics. D, Applied physics, 2008, Vol.41 (13)

2008

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Fast detector of the ellipticity of infrared and terahertz radiation basedon HgTe quantum well structures

Journal of applied physics, 2009-01, Vol.105 (1), p.013106-013106-6

2009

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Generation of far-infrared pulses by use of a passively mode-locked high-pressure CO2 laser

International journal of infrared and millimeter waves, 1990-07, Vol.11 (7), p.851-856

1990

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Low-voltage device for passive mode locking of pulsed infrared lasers

Soviet journal of quantum electronics, 1982-02, Vol.12 (2), p.175-178

1982

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Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengths

Physics of the solid state, 1993, Vol.35 (2), p.238-239

1993

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Effet photogalvanique en polarisation rectiligne dans GaAs-p dans le domaine de fréquences classique

Fizika tverdogo tela, 1989, Vol.31 (1), p.115-117

1989

Volltextzugriff (PDF)

Effet photogalvanique linéaire dans les semiconducteurs dans la région spectrale submillimétrique

Fizika tverdogo tela, 1988, Vol.30 (3), p.730-736

1988

Volltextzugriff (PDF)

Fast detector for the polarization characteristics determination of the pulse IR-FIR laser-radiation

[Conference Digest] International Conference on Millimeter Wave and Far-Infrared Technology: ICMWFT '90, 1989, p.165-167

1989

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Townsend discharge in argon and nitrogen: Study of the electron distribution function

Generation of Terahertz Radiation under the Femtosecond Laser Excitation of a Multilayer Structure Based on a-Si:H/a-SiC:H/c-Si

Application of silicon zig-zag wall arrays for anodes of Li-ion batteries

Spin-galvanic effect due to optical spin orientation in n -type GaAs quantum well structures

Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

Negative Electrodes for Lithium-Ion Batteries Obtained by Photoanodization of Solar-Grade Silicon

Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures

Comparative study of noise in low-current Townsend discharge in nitrogen and argon

Control of the breakdown delay time in a micro-discharge system by small dc bias current

Resonant inversion of the circular photogalvanic effect in n -doped quantum wells

Control of cadmium vapor pressure at growth and annealing of CdZnTe:Cl crystals with variable content of zinc for nuclear detectors

Electrical and Photoelectric Properties of [alpha]-Si/SiO.sub.2 and [alpha]-Ge/SiO.sub.2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures

Dynamics of the Townsend discharge in argon

Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge

Polymorphism of condensed phase of dissipative solitons

Control of the breakdown delay time in a micro-discharge system by small dc bias current

Fast detector of the ellipticity of infrared and terahertz radiation basedon HgTe quantum well structures

Generation of far-infrared pulses by use of a passively mode-locked high-pressure CO2 laser

Low-voltage device for passive mode locking of pulsed infrared lasers

Linear photogalvanic effect in p-type GaSb at infrared and submillimeter wavelengths

Effet photogalvanique en polarisation rectiligne dans GaAs-p dans le domaine de fréquences classique

Effet photogalvanique linéaire dans les semiconducteurs dans la région spectrale submillimétrique

Fast detector for the polarization characteristics determination of the pulse IR-FIR laser-radiation

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