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High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

IEEE electron device letters, 2006-05, Vol.27 (5), p.383-386

2006

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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Applied physics letters, 2012-08, Vol.101 (8), p.82110

2012

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Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

IEEE electron device letters, 2007-03, Vol.28 (3), p.211-213

2007

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Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

IEEE electron device letters, 2006-09, Vol.27 (9), p.728-730

2006

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Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

IEEE electron device letters, 2006-09, Vol.27 (9), p.765-768

2006

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Tungsten nanocrystals embedded in high- k materials for memory application

Applied physics letters, 2005-09, Vol.87 (11), p.113110-113110-3

2005

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Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

IEEE electron device letters, 2005-04, Vol.26 (4), p.231-233

2005

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Strained-Si heterostructure field effect transistors

Semiconductor science and technology, 1998-11, Vol.13 (11), p.1225-1246

1998

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Bendability of single-crystal Si MOSFETs investigated on flexible substrate

IEEE electron device letters, 2006-07, Vol.27 (7), p.538-541

2006

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Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

Applied physics letters, 2014-08, Vol.105 (7)

2014

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The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance

IEEE electron device letters, 2006-01, Vol.27 (1), p.58-61

2006

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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

IEEE electron device letters, 2006-05, Vol.27 (5), p.350-353

2006

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Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Applied surface science, 2004-03, Vol.224 (1), p.278-282

2004

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Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Thin solid films, 2004-09, Vol.462-463 (Complete), p.101-105

2004

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Extraction of interface state density of Pt/p-strained-Si Schottky diode

Thin solid films, 1998-12, Vol.335 (1), p.142-145

1998

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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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Gate-all-around MOSFETs : lateral ultra-narrow (≤10nm) fin as channel body

Electronics letters, 2005-11, Vol.41 (24), p.1353-1354

2005

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Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers

Semiconductor science and technology, 2003-01, Vol.18 (1), p.33-38

2003

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Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Thin solid films, 2004-09, Vol.462 (Complete), p.11-14

2004

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Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Thin solid films, 2004-09, Vol.462 (Complete), p.63-66

2004

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Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates

Journal of applied physics, 2003-03, Vol.93 (5), p.2464-2471

2003

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Structural characterisation of polycrystalline SiGe thin film

Solid-state electronics, 2001-11, Vol.45 (11), p.1963-1966

2001

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Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

Semiconductor science and technology, 2001-08, Vol.16 (8), p.704-707

2001

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Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1−xGex

Semiconductor science and technology, 2002-02, Vol.17 (2), p.141-144

2002

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MOS capacitor characteristics of plasma oxide on partially strained SiGeC films

Thin solid films, 1998-11, Vol.332 (1-2), p.375-378

1998

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High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Tungsten nanocrystals embedded in high- k materials for memory application

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

Strained-Si heterostructure field effect transistors

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Extraction of interface state density of Pt/p-strained-Si Schottky diode

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Gate-all-around MOSFETs : lateral ultra-narrow (≤10nm) fin as channel body

Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates

Structural characterisation of polycrystalline SiGe thin film

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1−xGex

MOS capacitor characteristics of plasma oxide on partially strained SiGeC films

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