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Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12021

2021

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Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

Journal of physics. D, Applied physics, 2016-02, Vol.49 (9), p.95108

2016

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Origin of Green Coloration in AlN Crystals Grown on SiC Seeds

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.546-550

2021

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Quantification of Hydrogen in Natural Diamond by Secondary Ion Mass Spectrometry (SIMS)

Doklady earth sciences, 2020-09, Vol.494 (1), p.699-703

2020

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Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

Journal of physics. D, Applied physics, 2015-12, Vol.48 (48), p.485106-485110

2015

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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Semiconductors (Woodbury, N.Y.), 2023-06, Vol.57 (6), p.300-304

2023

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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.355-361

2020

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Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12194

2021

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Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions

Technical physics letters, 2023-12, Vol.49 (12), p.253-255

2023

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Diffusion of zinc in gallium arsenide with the participation isovalent impurities

Journal of crystal growth, 2015-12, Vol.432, p.133-138

2015

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Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12076

2018

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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.474-482

2023

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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.352-359

2022

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Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.849-852

2023

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Zn diffusion technology for InP-InGaAs avalanche photodiodes

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12184

2021

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The Effect of Liquid Silicon on the AlN Crystal Growth

Semiconductors (Woodbury, N.Y.), 2022-05, Vol.56 (5), p.281-287

2022

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Globus-M plasma physics research for fusion application and compact neutron source development

Plasma physics and controlled fusion, 2016-01, Vol.58 (1), p.14032-6

2016

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Thin solid films, 2013-07, Vol.540, p.96-105

2013

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Atom Probe Tomography of the VV751P Nickel-Based Superalloy

Physics of metals and metallography, 2020, Vol.121 (1), p.53-64

2020

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Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD

Technical physics letters, 2020-10, Vol.46 (10), p.961-963

2020

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Surfactant effects on GaAs–Ge heterostructures

Journal of crystal growth, 2013-10, Vol.380, p.138-142

2013

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Effect of 3C-SiC irradiation with 8 MeV protons

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range

Technical physics letters, 2019-12, Vol.45 (12), p.1226-1229

2019

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Characterization of Nanosized Clusters and Transition Layers of Contacting γ- and γ'-Phases in a Ni-Based Superalloy

Physics of metals and metallography, 2023-04, Vol.124 (4), p.380-387

2023

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Characteristics of double-cascade photodiodes based on p-i-n AlGaAs/GaAs diodes connected by n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes

Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

Origin of Green Coloration in AlN Crystals Grown on SiC Seeds

Quantification of Hydrogen in Natural Diamond by Secondary Ion Mass Spectrometry (SIMS)

Radiation-stimulated photoluminescence in electron irradiated 4H-SiC

Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C

Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions

Diffusion of zinc in gallium arsenide with the participation isovalent impurities

Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions

Zn diffusion technology for InP-InGaAs avalanche photodiodes

The Effect of Liquid Silicon on the AlN Crystal Growth

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Globus-M plasma physics research for fusion application and compact neutron source development

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Atom Probe Tomography of the VV751P Nickel-Based Superalloy

Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD

Surfactant effects on GaAs–Ge heterostructures

Effect of 3C-SiC irradiation with 8 MeV protons

Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range

Characterization of Nanosized Clusters and Transition Layers of Contacting γ- and γ'-Phases in a Ni-Based Superalloy

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