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Enhanced photoluminescence of heavily n -doped germanium

Applied physics letters, 2009-05, Vol.94 (19), p.191107-191107-3

2009

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Carbon-doped GeTe: A promising material for Phase-Change Memories

Solid-state electronics, 2011-11, Vol.65-66, p.197-204

2011

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Low-temperature RPCVD of Si, SiGe alloy, and Si1―yCy films on Si substrates using trisilane (Silcore®)

Journal of crystal growth, 2009-06, Vol.311 (13), p.3522-3527

2009

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Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source

Optics express, 2008-06, Vol.16 (12), p.8780-8791

2008

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Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

Applied physics letters, 2002-12, Vol.81 (25), p.4700-4702

2002

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High pressure in situ HCl etching of Si1−xGex versus Si for advanced devices

Semiconductor science and technology, 2008-10, Vol.23 (10), p.105019

2008

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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Solid-state electronics, 2014-07, Vol.97, p.45-51

2014

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Two-dimensional photonic crystals with pure germanium-on-insulator

Optics communications, 2008-02, Vol.281 (4), p.846-850

2008

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Shallow trench isolation based on selective formation of oxidized porous silicon

Microelectronic engineering, 2011-07, Vol.88 (7), p.1214-1216

2011

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Low-thermal surface preparation, HCl etch and Si/SiGe selective epitaxy on (1 1 0) silicon surfaces

Semiconductor science and technology, 2008-10, Vol.23 (10), p.105018

2008

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Resist outgassing assessment for multi electron beams lithography

Microelectronic engineering, 2014-08, Vol.125, p.58-61

2014

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Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots

Applied physics letters, 2002-01, Vol.80 (3), p.509-511

2002

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ABAB organization of Ge∕Si(001) islands in multiplanes grown with low pressure chemical vapor deposition

Journal of applied physics, 2004-12, Vol.96 (11), p.6175-6182

2004

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Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Journal of crystal growth, 2004-04, Vol.265 (1), p.53-59

2004

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Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Applied physics letters, 2000-09, Vol.77 (12), p.1822-1824

2000

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Probing photonic crystals on silicon-on-insulator with Ge ∕ Si self-assembled islands as an internal source

Journal of applied physics, 2006-01, Vol.99 (2), p.023103-023103-5

2006

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Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities

Thin solid films, 2008-11, Vol.517 (1), p.121-124

2008

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Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

IEEE transactions on nanotechnology, 2006-11, Vol.5 (6), p.649-656

2006

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Optical recombination from excited states in Ge/Si self-assembled quantum dots

Physical review. B, Condensed matter, 2001-10, Vol.64 (15), Article 155310

2001

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High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

IEEE electron device letters, 2008-06, Vol.29 (6), p.635-637

2008

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Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas

Thin solid films, 2010, Vol.518 (6), p.S92-S95

2010

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The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.205-213

2008

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Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

Applied physics letters, 2004-04, Vol.84 (15), p.2829-2831

2004

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Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

Applied physics letters, 2002-05, Vol.80 (18), p.3274-3276

2002

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Selective growth of tensily strained Si1-yCy films on patterned Si substrates

Materials science in semiconductor processing, 2009-02, Vol.12 (1-2), p.34-39

2009

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Enhanced photoluminescence of heavily n -doped germanium

Carbon-doped GeTe: A promising material for Phase-Change Memories

Low-temperature RPCVD of Si, SiGe alloy, and Si1―yCy films on Si substrates using trisilane (Silcore®)

Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source

Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

High pressure in situ HCl etching of Si1−xGex versus Si for advanced devices

Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes

Two-dimensional photonic crystals with pure germanium-on-insulator

Shallow trench isolation based on selective formation of oxidized porous silicon

Low-thermal surface preparation, HCl etch and Si/SiGe selective epitaxy on (1 1 0) silicon surfaces

Resist outgassing assessment for multi electron beams lithography

Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots

ABAB organization of Ge∕Si(001) islands in multiplanes grown with low pressure chemical vapor deposition

Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Probing photonic crystals on silicon-on-insulator with Ge ∕ Si self-assembled islands as an internal source

Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities

Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices

Optical recombination from excited states in Ge/Si self-assembled quantum dots

High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

Selective growth of tensily strained Si1-yCy films on patterned Si substrates

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