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Periodic scarred States in open quantum dots as evidence of quantum Darwinism

Physical review letters, 2010-04, Vol.104 (17), p.176801-176801, Article 176801

2010

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Open quantum dots—probing the quantum to classical transition

Semiconductor science and technology, 2011-04, Vol.26 (4), p.043001

2011

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Observation of Spin Injection at a Ferromagnet-Semiconductor Interface

Physical review letters, 1999-07, Vol.83 (1), p.203-206

1999

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Charge scattering mechanisms in shallow InAs quantum wells

Journal of applied physics, 2020-04, Vol.127 (14)

2020

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Imaging scarred states in quantum dots

Journal of physics. Condensed matter, 2009-05, Vol.21 (21), p.212201-212201 (5)

2009

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Scaling projections for Sb-based p-channel FETs

Solid-state electronics, 2010-11, Vol.54 (11), p.1349-1358

2010

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Effect of illumination on the interplay between Dresselhaus and Rashba spin-orbit couplings in InAs quantum wells

Journal of applied physics, 2019-08, Vol.126 (7)

2019

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High mobility p-channel HFETs using strained Sb-based materials

Electronics letters, 2007, Vol.43 (15), p.834-835

2007

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InAs HEMT narrowband amplifier with ultra-low power dissipation

Electronics letters, 2006-06, Vol.42 (12), p.688-690

2006

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Growth of dilute GaNSb by plasma-assisted MBE

Journal of crystal growth, 2005-05, Vol.278 (1), p.188-192

2005

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High radiation tolerance of InAs∕AlSb high-electron-mobility transistors

Applied physics letters, 2005-10, Vol.87 (17)

2005

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Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

Journal of crystal growth, 2000-12, Vol.220 (4), p.384-392

2000

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Band gap reduction in GaNSb alloys due to the anion mismatch

Applied physics letters, 2005-09, Vol.87 (13), p.132101-132101-3

2005

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Nanostructure patterns written in III–V semiconductors by an atomic force microscope

Applied physics letters, 1997-04, Vol.70 (14), p.1855-1857

1997

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Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures

Applied physics letters, 1996-06, Vol.68 (25), p.3614-3616

1996

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Arsenic cross-contamination in GaSb/InAs superlattices

Journal of crystal growth, 2004-10, Vol.270 (3-4), p.301-308

2004

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Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb

Journal of crystal growth, 2007-06, Vol.304 (2), p.338-341

2007

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Sb-based HEMTs with InAlSb/InAs heterojunction

Electronics letters, 2005-09, Vol.41 (19), p.1088-1089

2005

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Low-frequency noise in AlSb∕InAs high-electron-mobility transistor structure as a function of temperature and illumination

Applied physics letters, 2004-08, Vol.85 (5), p.774-776

2004

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Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

Journal of crystal growth, 2002-03, Vol.236 (1), p.155-164

2002

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Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

Surface science, 2000-10, Vol.465 (3), p.361-371

2000

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Band anticrossing in GaNxSb1−x

Applied physics letters, 2006-09, Vol.89 (11)

2006

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Nanometer scale surface clustering on ZnSe epilayers

Applied physics letters, 1998-03, Vol.72 (10), p.1238-1240

1998

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Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

Applied physics letters, 1999-03, Vol.74 (12), p.1704-1706

1999

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The structure of Sb-terminated GaAs(001) surfaces

Surface science, 1999-08, Vol.436 (1), p.L707-L714

1999

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Periodic scarred States in open quantum dots as evidence of quantum Darwinism

Open quantum dots—probing the quantum to classical transition

Observation of Spin Injection at a Ferromagnet-Semiconductor Interface

Charge scattering mechanisms in shallow InAs quantum wells

Imaging scarred states in quantum dots

Scaling projections for Sb-based p-channel FETs

Effect of illumination on the interplay between Dresselhaus and Rashba spin-orbit couplings in InAs quantum wells

High mobility p-channel HFETs using strained Sb-based materials

InAs HEMT narrowband amplifier with ultra-low power dissipation

Growth of dilute GaNSb by plasma-assisted MBE

High radiation tolerance of InAs∕AlSb high-electron-mobility transistors

Surface reconstruction phase diagrams for InAs, AlSb, and GaSb

Band gap reduction in GaNSb alloys due to the anion mismatch

Nanostructure patterns written in III–V semiconductors by an atomic force microscope

Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures

Arsenic cross-contamination in GaSb/InAs superlattices

Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb

Sb-based HEMTs with InAlSb/InAs heterojunction

Low-frequency noise in AlSb∕InAs high-electron-mobility transistor structure as a function of temperature and illumination

Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

Band anticrossing in GaNxSb1−x

Nanometer scale surface clustering on ZnSe epilayers

Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

The structure of Sb-terminated GaAs(001) surfaces

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