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Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

Applied physics letters, 2014-12, Vol.105 (23)

2014

Volltextzugriff (PDF)

20% efficient solar cells fabricated from epitaxially grown and freestanding n-type wafers

Solar energy materials and solar cells, 2017-01, Vol.159, p.570-575

2017

Volltextzugriff (PDF)

Rear side passivation of PERC-type solar cells by wet oxides grown from purified steam

Progress in photovoltaics, 2011-05, Vol.19 (3), p.361-365

2011

Volltextzugriff (PDF)

Comparison of emitter saturation current densities determined by injection-dependent lifetime spectroscopy in high and low injection regimes

Progress in photovoltaics, 2012-01, Vol.20 (1), p.21-30

2012

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Iron related solar cell instability: Imaging analysis and impact on cell performance

Solar energy materials and solar cells, 2015-07, Vol.138, p.96-101

2015

Volltextzugriff (PDF)

Effect of a post-deposition anneal on Al2O3/Si interface properties

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000891-000896

2010

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n-type silicon - enabling efficiencies > 20% in industrial production

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000050-000056

2010

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Fundamental studies on the front contact formation resulting in a 21% efficiency silicon solar cell with printed rear and front contacts

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000672-000677

2010

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Towards industrially feasible high-efficiency n-type Si solar cells with boron-diffused front side emitter - combining firing stable Al2O3 passivation and fine-line printing

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.003587-003592

2010

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Properties of the c-Si/Al{sub 2}O{sub 3} interface of ultrathin atomic layer deposited Al{sub 2}O{sub 3} layers capped by SiN{sub x} for c-Si surface passivation

Applied physics letters, 2014-12, Vol.105 (23)

2014

Volltextzugriff (PDF)

Passivating and Carrier-selective Contacts - Basic Requirements and Implementation

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.2064-2069

2017

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Boron Emitter Passivation With Al O and Al O /SiN Stacks Using ALD Al O

IEEE journal of photovoltaics, 2013-01, Vol.3 (1), p.236-245

2013

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Diffractive Backside Structures via Nanoimprint Lithography

Energy procedia, 2012, Vol.27, p.337-342

2012

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Development of GaInP/GaAs/Si Solar Cells using Surface Activated Wafer Bonding

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (40), p.2962-2962

2012

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Notice of Removal: Development of highly-efficient III-V//Si wafer-bonded triple-junction solar cells

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.1-4

2017

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Silicon solar cell–integrated stress and temperature sensors for photovoltaic modules

Progress in photovoltaics, 2020-07, Vol.28 (7), p.717-724

2020

Volltextzugriff (PDF)

Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing

AIP Conference Proceedings, 2022, Vol.2487 (1)

2022

Volltextzugriff (PDF)

High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency

Energy procedia, 2011, Vol.8, p.509-514

2011

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Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter

Energy procedia, 2014, Vol.55, p.265-271

2014

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N-type Black Silicon Solar Cells

Energy procedia, 2013, Vol.38, p.866-871

2013

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Solar Cells with 20% Efficiency and Lifetime Evaluation of Epitaxial Wafers

Energy procedia, 2016, Vol.92, p.785-790

2016

Volltextzugriff (PDF)

Towards industrial n-type PERT silicon solar cells: rear passivation and metallization scheme

Energy procedia, 2011, Vol.8, p.479-486

2011

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21.8% Efficient n-type Solar Cells with Industrially Feasible Plated Metallization

Energy procedia, 2014, Vol.55, p.400-409

2014

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Predictive Simulation of Doping Processes for Silicon Solar Cells

Energy procedia, 2013, Vol.38, p.312-320

2013

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Development and characterization of multifunctional PECVD SiNX:P layers for laser-doped selective emitters

AIP conference proceedings, 2018, Vol.1999 (1)

2018

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Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

20% efficient solar cells fabricated from epitaxially grown and freestanding n-type wafers

Rear side passivation of PERC-type solar cells by wet oxides grown from purified steam

Comparison of emitter saturation current densities determined by injection-dependent lifetime spectroscopy in high and low injection regimes

Iron related solar cell instability: Imaging analysis and impact on cell performance

Effect of a post-deposition anneal on Al2O3/Si interface properties

n-type silicon - enabling efficiencies > 20% in industrial production

Fundamental studies on the front contact formation resulting in a 21% efficiency silicon solar cell with printed rear and front contacts

Towards industrially feasible high-efficiency n-type Si solar cells with boron-diffused front side emitter - combining firing stable Al2O3 passivation and fine-line printing

Properties of the c-Si/Al{sub 2}O{sub 3} interface of ultrathin atomic layer deposited Al{sub 2}O{sub 3} layers capped by SiN{sub x} for c-Si surface passivation

Passivating and Carrier-selective Contacts - Basic Requirements and Implementation

Boron Emitter Passivation With Al O and Al O /SiN Stacks Using ALD Al O

Diffractive Backside Structures via Nanoimprint Lithography

Development of GaInP/GaAs/Si Solar Cells using Surface Activated Wafer Bonding

Notice of Removal: Development of highly-efficient III-V//Si wafer-bonded triple-junction solar cells

Silicon solar cell–integrated stress and temperature sensors for photovoltaic modules

Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing

High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency

Ion Implantation for All-alumina IBC Solar Cells with Floating Emitter

N-type Black Silicon Solar Cells

Solar Cells with 20% Efficiency and Lifetime Evaluation of Epitaxial Wafers

Towards industrial n-type PERT silicon solar cells: rear passivation and metallization scheme

21.8% Efficient n-type Solar Cells with Industrially Feasible Plated Metallization

Predictive Simulation of Doping Processes for Silicon Solar Cells

Development and characterization of multifunctional PECVD SiNX:P layers for laser-doped selective emitters

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