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Thermally induced interfacial reactions in Ti/Pd/Si and Ti/Pd/Si(As) ternary systems

Applied physics. A, Materials science & processing, 2015-03, Vol.118 (3), p.1033-1037

2015

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Effect of bath temperature and annealing on the formation of CuInSe2

Solar energy materials and solar cells, 2009-02, Vol.93 (2), p.262-266

2009

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Characterization of Silicon Surfaces Implanted with Antimony Ions and Submitted to Annealing and Ageing Treatments

Journal of nanoscience and nanotechnology, 2012-08, Vol.12 (8), p.6864-6868

2012

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Mixing of Cr and Si atoms induced by noble gas ions irradiation of Cr/Si bilayers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-12, Vol.269 (24), p.3242-3245

2011

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MO-0310 From Patient Reported Experience Measures (PREMs) to improvement actions at the Radiotherapy dept

Radiotherapy and oncology, 2022-05, Vol.170, p.S271-S272

2022

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Preparation and characterization of Al-doped ZnO piezoelectric thin films grown by pulsed laser deposition

Ceramics international, 2016-05, Vol.42 (6), p.6701-6706

2016

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Blue luminescence from porous layers produced by metal-assisted chemical etching on low-doped silicon

Vacuum, 2005-10, Vol.80 (4), p.366-370

2005

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Competitive diffusion of gold and copper atoms in Cu/Au/Si and Au/Cu/Si annealed systems

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.571-576

2005

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Study of the On-Surface Diffusion of the Ternary System Au/Pd/Si (111)

Materials science forum, 2009-01, Vol.609, p.161-165

2009

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Study of diffusion at surface of multilayered Cu/Au films on monocrystalline silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004, Vol.213, p.519-522

2004

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Experimental Characterization of Antimony Dopant in Silicon Substrate

Acta physica Polonica, A, 2016-07, Vol.130 (1), p.51-54

2016

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Irradiation-induced silicide formation in the ion beam-mixed Au/Si(1 0 0) system at room temperature

Vacuum, 2005-05, Vol.78 (2), p.223-227

2005

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Comparative study of simulated zirconia inert matrix fuel stabilized with yttrium, lanthanum or praseodymium: Synthesis and leaching tests

Progress in nuclear energy (New series), 2006, Vol.48 (1), p.70-84

2006

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Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-06, Vol.193 (1), p.336-340

2002

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Mixing of Au in Si induced by secondary and high-order recoil implantation

Radiation effects and defects in solids, 2005-09, Vol.160 (9), p.377-382

2005

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Effect of bath temperature and annealing on the formation of CuInSe sub(2)

Solar energy materials and solar cells, 2009-02, Vol.93 (2), p.262-266

2009

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Effect of bath temperature and annealing on the formation of CuInSe 2

Solar energy materials and solar cells, 2009, Vol.93 (2), p.262-266

2009

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A simple method for the deconvolution of Rutherford backscattering spectra

Vacuum, 2001-03, Vol.60 (3), p.285-289

2001

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Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer

Vacuum, 2006-09, Vol.81 (1), p.45-48

2006

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Compositional Microanalysis of the Obtained Copper Silicide from an Annealed Ternary System Cu/Au/Si by Standard RBS, Microprobe PIXE, XRD and EDS

Advanced materials research, 2011, Vol.324, p.306-309

2011

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Study on the solid state reaction between bilayered Pd/Au films and silicon substrates

Vacuum, 2006-11, Vol.81 (4), p.489-493

2006

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Epitaxial growth of copper silicides by “bilayer” technique on monocrystalline silicon with and without native SiOx

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-08, Vol.132 (3), p.283-287

2006

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Epitaxial growth of copper silicides by 'bilayer'technique on monocrystalline silicon with and without native SiOx

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-08, Vol.132 (3), p.283-287

2006

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Epitaxial growth of copper silicides by “bilayer” technique on monocrystalline silicon with and without native SiO x

Materials science & engineering. B, Solid-state materials for advanced technology, 2006, Vol.132 (3), p.283-287

2006

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Rutherford Backscattering and X-Ray Fluorescence Analysis of Sediments

X-ray spectrometry, 1997-07, Vol.26 (4), p.179-181

1997

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Thermally induced interfacial reactions in Ti/Pd/Si and Ti/Pd/Si(As) ternary systems

Effect of bath temperature and annealing on the formation of CuInSe2

Characterization of Silicon Surfaces Implanted with Antimony Ions and Submitted to Annealing and Ageing Treatments

Mixing of Cr and Si atoms induced by noble gas ions irradiation of Cr/Si bilayers

MO-0310 From Patient Reported Experience Measures (PREMs) to improvement actions at the Radiotherapy dept

Preparation and characterization of Al-doped ZnO piezoelectric thin films grown by pulsed laser deposition

Blue luminescence from porous layers produced by metal-assisted chemical etching on low-doped silicon

Competitive diffusion of gold and copper atoms in Cu/Au/Si and Au/Cu/Si annealed systems

Study of the On-Surface Diffusion of the Ternary System Au/Pd/Si (111)

Study of diffusion at surface of multilayered Cu/Au films on monocrystalline silicon

Experimental Characterization of Antimony Dopant in Silicon Substrate

Irradiation-induced silicide formation in the ion beam-mixed Au/Si(1 0 0) system at room temperature

Comparative study of simulated zirconia inert matrix fuel stabilized with yttrium, lanthanum or praseodymium: Synthesis and leaching tests

Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

Mixing of Au in Si induced by secondary and high-order recoil implantation

Effect of bath temperature and annealing on the formation of CuInSe sub(2)

Effect of bath temperature and annealing on the formation of CuInSe 2

A simple method for the deconvolution of Rutherford backscattering spectra

Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer

Compositional Microanalysis of the Obtained Copper Silicide from an Annealed Ternary System Cu/Au/Si by Standard RBS, Microprobe PIXE, XRD and EDS

Study on the solid state reaction between bilayered Pd/Au films and silicon substrates

Epitaxial growth of copper silicides by “bilayer” technique on monocrystalline silicon with and without native SiOx

Epitaxial growth of copper silicides by 'bilayer'technique on monocrystalline silicon with and without native SiOx

Epitaxial growth of copper silicides by “bilayer” technique on monocrystalline silicon with and without native SiO x

Rutherford Backscattering and X-Ray Fluorescence Analysis of Sediments

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