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PCB-planar transformers equivalent circuit model identification using genetic algorithm

International journal of modelling, identification and control, 2018, Vol.29 (4), p.295

2018

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On the Role of the N-N ^ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

IEEE transactions on power electronics, 2008-01, Vol.23 (1), p.491-494

2008

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Characterization, modeling and design parameters identification of silicon carbide junction field effect transistor for temperature sensor applications

Sensors (Basel, Switzerland), 2010-01, Vol.10 (1), p.388-399

2010

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Experimental Analysis of Punch-Through Conditions in Power P- I- N Diodes

IEEE transactions on power electronics, 2007-01, Vol.22 (1), p.13-20

2007

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An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

International journal of numerical modelling, 2015-05, Vol.28 (3), p.287-300

2015

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Simulation of Current and Voltage Sensors Using a Nodal Method

Sensor letters, 2011-12, Vol.9 (6), p.2351-2355

2011

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SiC-Junction Field Effect Transistor Temperature Sensor: Theoretical Analysis and Experimental Validation

Sensor letters, 2011-12, Vol.9 (6), p.2347-2350

2011

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Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Sensor letters, 2009-10, Vol.7 (5), p.707-711

2009

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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

Materials science forum, 2009, Vol.600-603, p.1031-1034

2009

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A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

International journal of numerical modelling, 2018-01, Vol.31 (1), p.n/a

2018

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A spiral planar inductor: A n experimentally verified physically based model for frequency and time domains

International journal of numerical modelling, 2018-01, Vol.31 (1)

2018

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PCB-planar transformers equivalent circuit model identification using genetic algorithm

International journal of modelling, identification and control, 2018, Vol.29 (4), p.295

2018

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A novel approach to extract accurate design parameters of PiN diode

International journal of numerical modelling, 2007-11, Vol.20 (6), p.283-297

2007

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Design and modeling of planar magnetic inductors for power converters applications

2015 7th International Conference on Modelling, Identification and Control (ICMIC), 2015, p.1-5

2015

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Modeling and simulation of a high-frequency planar power transformers

2015 4th International Conference on Electrical Engineering (ICEE), 2015, p.1-6

2015

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Experimental analysis of planar spiral inductors

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), 2014, p.1-5

2014

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Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

European physical journal. Applied physics, 2014-05, Vol.66 (2), p.20901

2014

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High-frequency investigation of planar transformers

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), 2014, p.1-5

2014

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An improved SiC-JFET body diode model for circuit modeling applications

2015 7th International Conference on Modelling, Identification and Control (ICMIC), 2015, p.1-6

2015

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Avalanche behavior of low-voltage power MOSFETs

IEEE power electronics letters, 2004-09, Vol.2 (3), p.104-107

2004

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A low-cost experimental test bench for electronic power devices

2014 International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), 2014, p.1-6

2014

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An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters: PIN DIODE, MODELING, TEMPERATURE ESTIMATION

International journal of numerical modelling, 2015-05, Vol.28 (3), p.287-300

2015

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Toward SiC-JFETs modelling with temperature dependence

European physical journal. Applied physics, 2010-11, Vol.52 (2), p.20301

2010

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A physically based diode model for circuit simulation

International journal of numerical modelling, 2013-05, Vol.26 (3), p.295-306

2013

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SiC-VJFETs power switching devices: an improved model and parameter optimization technique

European physical journal. Applied physics, 2009-12, Vol.48 (3), p.30305

2009

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PCB-planar transformers equivalent circuit model identification using genetic algorithm

On the Role of the N-N ^ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

Characterization, modeling and design parameters identification of silicon carbide junction field effect transistor for temperature sensor applications

Experimental Analysis of Punch-Through Conditions in Power P- I- N Diodes

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Simulation of Current and Voltage Sensors Using a Nodal Method

SiC-Junction Field Effect Transistor Temperature Sensor: Theoretical Analysis and Experimental Validation

Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

A spiral planar inductor: A n experimentally verified physically based model for frequency and time domains

PCB-planar transformers equivalent circuit model identification using genetic algorithm

A novel approach to extract accurate design parameters of PiN diode

Design and modeling of planar magnetic inductors for power converters applications

Modeling and simulation of a high-frequency planar power transformers

Experimental analysis of planar spiral inductors

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

High-frequency investigation of planar transformers

An improved SiC-JFET body diode model for circuit modeling applications

Avalanche behavior of low-voltage power MOSFETs

A low-cost experimental test bench for electronic power devices

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters: PIN DIODE, MODELING, TEMPERATURE ESTIMATION

Toward SiC-JFETs modelling with temperature dependence

A physically based diode model for circuit simulation

SiC-VJFETs power switching devices: an improved model and parameter optimization technique

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