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Economically alloyed wrought white cast irons

Metal science and heat treatment, 1989-05, Vol.31 (5), p.358-367

1989

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The role of а buffer layer at the contact with silicon in structures with an insulating gap made of a material replacing SiO2

Ceramics international, 2024-03, Vol.50 (6), p.9678-9681

2024

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Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1002-1005

2023

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Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor

Journal of communications technology & electronics, 2022-12, Vol.67 (Suppl 1), p.S115-S118

2022

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Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages

Semiconductors (Woodbury, N.Y.), 2021-01, Vol.55 (1), p.21-24

2021

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Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

Journal of communications technology & electronics, 2023-10, Vol.68 (10), p.1191-1196

2023

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On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3

Ceramics international, 2021-08, Vol.47 (15), p.21248-21252

2021

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Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material

Semiconductors (Woodbury, N.Y.), 2020-11, Vol.54 (11), p.1445-1449

2020

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Ultrathin

Journal of communications technology & electronics, 2022-12, Vol.67 (Suppl 1), p.S115

2022

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The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures

Радиотехника и электроника, 2023-09, Vol.68 (9), p.917-920

2023

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Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures

Радиотехника и электроника, 2023-10, Vol.68 (10), p.973-979

2023

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Ergodicity of a Multichannel Queueing System with Balking

Theory of probability and its applications, 2012-01, Vol.56 (1), p.120-126

Belorusov, T. N.

2012

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Determination of the primary technical parameters of the test bench for controlling the temperature of rails and rail bars of continuous welded rail

MATEC Web of Conferences, 2017, Vol.133, p.3002

2017

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Limit Theorems for Systems with Impatient Customers under High Load Conditions

Theory of probability and its applications, 2012-01, Vol.56 (4), p.674-682

2012

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Development of Communication among the Members of the Youth Policy

Review of European studies, 2015-04, Vol.7 (8)

2015

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The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures

Physics of the Solid State, 2022, Vol.64 (5), p.549

2022

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Эргодичность многоканальной системы обслуживания с возможностью неприсоединения к очереди

Teorija verojatnostej i ee primenenija, 2011, Vol.56 (1), p.145-152

2011

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A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB

Physics of the Solid State, 2022, Vol.63 (13), p.1749

2022

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A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB

Physics of the Solid State, 2022, Vol.63 (13), p.2182

2022

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Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films

Physics of the Solid State, 2023, Vol.65 (4), p.557

2023

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Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films

Physics of the Solid State, 2023, Vol.65 (6), p.1015

2023

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The influence of the PZT buffer layer on electrophysical properties OF MDM structures with the BST film

Physics of the Solid State, 2022, Vol.63 (13), p.1757

2022

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The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

Physics of the Solid State, 2022, Vol.63 (13), p.2190

2022

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Synthesis and Study of High-Performance Ferroelectric Materials for Advanced Non-Volatile Memory Devices

2023 7th International Conference on Information, Control, and Communication Technologies (ICCT), 2023, p.1-4

2023

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IMPROVEMENT OF THE TEMPERATURE CONTROL METHOD FOR RAILS AND RAILS STRINGS OF THE CONTINUOUS WELDED TRACK

Collection of scientific works of the Ukrainian State University of Railway Transport, 2017-12 (174)

2017

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Economically alloyed wrought white cast irons

The role of а buffer layer at the contact with silicon in structures with an insulating gap made of a material replacing SiO2

Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures

Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor

Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages

Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3

Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material

Ultrathin

The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures

Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures

Ergodicity of a Multichannel Queueing System with Balking

Determination of the primary technical parameters of the test bench for controlling the temperature of rails and rail bars of continuous welded rail

Limit Theorems for Systems with Impatient Customers under High Load Conditions

Development of Communication among the Members of the Youth Policy

The Effect Of A Strong Static Electric Field And Heating On Characteristics Of The High-Frequency Impedance Of Metal--Ferroelectric--Semiconductor Structures

Эргодичность многоканальной системы обслуживания с возможностью неприсоединения к очереди

A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB

A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba-=SUB=-x-=/SUB=-Sr-=SUB=-1-x-=/SUB=-TiO-=SUB=-3-=/SUB

Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films

Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films

The influence of the PZT buffer layer on electrophysical properties OF MDM structures with the BST film

The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film

Synthesis and Study of High-Performance Ferroelectric Materials for Advanced Non-Volatile Memory Devices

IMPROVEMENT OF THE TEMPERATURE CONTROL METHOD FOR RAILS AND RAILS STRINGS OF THE CONTINUOUS WELDED TRACK

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