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Improved Classification of VHR Images of Urban Areas Using Directional Morphological Profiles

IEEE transactions on geoscience and remote sensing, 2008-10, Vol.46 (10), p.2803-2813

2008

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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.904-911

1998

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Generalized pixel profiling and comparative segmentation with application to arteriovenous malformation segmentation

Medical image analysis, 2012-07, Vol.16 (5), p.991-1002

2012

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A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.472-481

1998

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Relevance Criteria for Spatial Information Retrieval Using Error-Tolerant Graph Matching

IEEE transactions on geoscience and remote sensing, 2007-04, Vol.45 (4), p.810-817

2007

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Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2194-2209

1988

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Observation of single interface traps in submicron MOSFET's by charge pumping

IEEE transactions on electron devices, 1996-06, Vol.43 (6), p.940-945

1996

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Hot-carrier degradation in submicrometre MOSFETs: from uniform injection towards the real operating conditions

Semiconductor science and technology, 1995-09, Vol.10 (9), p.1208-1220

1995

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On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

IEEE transactions on electron devices, 1994-03, Vol.41 (3), p.413-419

1994

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Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

IEEE transactions on electron devices, 1994-08, Vol.41 (8), p.1421-1428

1994

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An Assessment of Geometric Activity Features for Per-pixel Classification of Urban Man-made Objects using Very High Resolution Satellite Imagery

Photogrammetric engineering and remote sensing, 2009-04, Vol.75 (4), p.397-411

2009

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Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

IEEE transactions on electron devices, 1990-04, Vol.37 (4), p.980-993

1990

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The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.310-313

1990

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Study of the ESD behavior of different clamp configurations in a 0.35 μm CMOS technology

Microelectronics and reliability, 1998-11, Vol.38 (11), p.1733-1739

1998

Volltextzugriff (PDF)

Performance and reliability aspects of FOND: a new deep submicron CMOS device concept

IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1407-1415

1996

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A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

Proceedings of International Electron Devices Meeting, 1995, p.863-866

1995

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Building-in reliability during library development: Hot-carrier degradation is no longer a problem of the technologists only

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1425-1428

1997

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Comparison of different on-chip ESD protection structures in a 0.35 μm CMOS technology

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1537-1540

1997

Volltextzugriff (PDF)

IL‐5 in post‐traumatic eosinophilic pleural effusion

Clinical and experimental immunology, 1993-07, Vol.93 (1), p.115-119

1993

Volltextzugriff (PDF)

Modelling Spatial Correlation and Image Statistics for Improved Tracking of Human Gestures

Lecture notes in computer science, 2005, p.545-552

2005

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Hot-carrier effects in n-channel MOS transistors under alternating stress conditions

IEEE electron device letters, 1988-05, Vol.9 (5), p.232-234

1988

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Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET's

IEEE electron device letters, 1992-07, Vol.13 (7), p.357-359

1992

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Study of the hot-carrier degradation performance of 0.35-μm fully overlapped LDD devices

Microelectronic engineering, 1995-06, Vol.28 (1), p.265-268

1995

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On the different time dependence of interface trap generation and charge trapping during hot carrier degradation in CMOS

Microelectronic engineering, 1992-09, Vol.19 (1), p.465-468

1992

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On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs

IEEE electron device letters, 1989-12, Vol.10 (12), p.553-555

1989

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Improved Classification of VHR Images of Urban Areas Using Directional Morphological Profiles

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

Generalized pixel profiling and comparative segmentation with application to arteriovenous malformation segmentation

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Relevance Criteria for Spatial Information Retrieval Using Error-Tolerant Graph Matching

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Observation of single interface traps in submicron MOSFET's by charge pumping

Hot-carrier degradation in submicrometre MOSFETs: from uniform injection towards the real operating conditions

On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

An Assessment of Geometric Activity Features for Per-pixel Classification of Urban Man-made Objects using Very High Resolution Satellite Imagery

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETs

Study of the ESD behavior of different clamp configurations in a 0.35 μm CMOS technology

Performance and reliability aspects of FOND: a new deep submicron CMOS device concept

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

Building-in reliability during library development: Hot-carrier degradation is no longer a problem of the technologists only

Comparison of different on-chip ESD protection structures in a 0.35 μm CMOS technology

IL‐5 in post‐traumatic eosinophilic pleural effusion

Modelling Spatial Correlation and Image Statistics for Improved Tracking of Human Gestures

Hot-carrier effects in n-channel MOS transistors under alternating stress conditions

Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET's

Study of the hot-carrier degradation performance of 0.35-μm fully overlapped LDD devices

On the different time dependence of interface trap generation and charge trapping during hot carrier degradation in CMOS

On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs

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