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Absorption and single-pass gain measurements in optically pumped type-II midinfrared laser structures

IEEE journal of quantum electronics, 2004-12, Vol.40 (12), p.1657-1662

2004

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High-power 2.3 [micro sign]m laser arrays emitting 10 W CW at room temperature

Electronics letters, 2004, Vol.40 (12), p.737

2004

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2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

IEEE photonics technology letters, 1999-07, Vol.11 (7), p.794-796

1999

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High-power 2.3-μm GaSb-based linear laser array

IEEE photonics technology letters, 2004-10, Vol.16 (10), p.2218-2220

2004

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Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1063-1068

2005

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Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-[micro]m diode lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1063

2005

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

IEEE journal of quantum electronics, 2003, Vol.39 (1), p.120-129

2003

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High-power 2.3-[mu]m GaSb-based linear laser array

IEEE photonics technology letters, 2004-10, Vol.16 (10), p.2218

2004

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Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers : Experiment and modeling

IEEE journal of quantum electronics, 1999-10, Vol.35 (10), p.1515-1520

1999

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Novel design of AlGaInAs-InP lasers operating at 1.3 μm

IEEE journal of quantum electronics, 1995-03, Vol.31 (3), p.423-426

1995

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-/spl mu/m multi-quantum-well laser performance

IEEE journal of quantum electronics, 2003-01, Vol.39 (1), p.120-129

2003

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-[mu]m multi-quantum-well laser performance

IEEE journal of quantum electronics, 2003-01, Vol.39 (1), p.120

2003

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Novel design of AlGaInAs-InP lasers operating at 1.3 /spl mu/m

IEEE journal of quantum electronics, 1995-03, Vol.31 (3), p.423-426

1995

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Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers

IEEE journal of quantum electronics, 1996-08, Vol.32 (8), p.1450-1455

1996

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Effects of daytime administration of zolpidem versus triazolam on memory

European journal of clinical pharmacology, 1995-06, Vol.48 (2), p.115-122

1995

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Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

IEEE photonics technology letters, 1997-12, Vol.9 (12), p.1558-1560

1997

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Direct measurements of heterobarrier leakage current and modal gain in 2.3 [micro sign]m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Electronics letters, 1999, Vol.35 (4), p.298

1999

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Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

IEEE transactions on electron devices, 1995-02, Vol.42 (2), p.215-218, Article 215

1995

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Wavelength chirp and dependence of carrier temperature on current in MQW InGaAsP-InP lasers

IEEE journal of quantum electronics, 1997-08, Vol.33 (8), p.1396-1402

1997

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Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling

IEEE journal of quantum electronics, 1999-10, Vol.35 (10), p.1515-1520

1999

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Multiterminal light-emitting logic device electrically reprogrammable between OR and NAND functions

IEEE transactions on electron devices, 1993-08, Vol.40 (8), p.1371-1377

1993

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Caffeine effects on alertness and performance following sleep deprivation

Pharmacology, biochemistry and behavior, 1991-05, Vol.39 (1), p.244-245

1991

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Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

Conference on Lasers and Electro-Optics, 2003. CLEO '03, 2003, p.3 pp.

2003

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Effect of p-doping on carrier leakage and characteristic temperature T/sub 0/ of 1.3 /spl mu/m strained lnGaAsP/lnP multiple quantum well lasers

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics, 1997, Vol.11, p.157-157

1997

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2.2-2.5 /spl mu/m InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (/spl Delta//spl lambda/ = 300 nm) optical gain spectrum

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 2001, p.193-194

2001

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Absorption and single-pass gain measurements in optically pumped type-II midinfrared laser structures

High-power 2.3 [micro sign]m laser arrays emitting 10 W CW at room temperature

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

High-power 2.3-μm GaSb-based linear laser array

Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-[micro]m diode lasers

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

High-power 2.3-[mu]m GaSb-based linear laser array

Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers : Experiment and modeling

Novel design of AlGaInAs-InP lasers operating at 1.3 μm

Microscopic simulation of the temperature dependence of static and dynamic 1.3-/spl mu/m multi-quantum-well laser performance

Microscopic simulation of the temperature dependence of static and dynamic 1.3-[mu]m multi-quantum-well laser performance

Novel design of AlGaInAs-InP lasers operating at 1.3 /spl mu/m

Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers

Effects of daytime administration of zolpidem versus triazolam on memory

Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

Direct measurements of heterobarrier leakage current and modal gain in 2.3 [micro sign]m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Wavelength chirp and dependence of carrier temperature on current in MQW InGaAsP-InP lasers

Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling

Multiterminal light-emitting logic device electrically reprogrammable between OR and NAND functions

Caffeine effects on alertness and performance following sleep deprivation

Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

Effect of p-doping on carrier leakage and characteristic temperature T/sub 0/ of 1.3 /spl mu/m strained lnGaAsP/lnP multiple quantum well lasers

2.2-2.5 /spl mu/m InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (/spl Delta//spl lambda/ = 300 nm) optical gain spectrum

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