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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Nature communications, 2014-09, Vol.5 (1), p.4836-4836, Article 4836

2014

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Layer-Resolved Graphene Transfer via Engineered Strain Layers

Science (American Association for the Advancement of Science), 2013-11, Vol.342 (6160), p.833-836

2013

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Extremely Flexible Nanoscale Ultrathin Body Silicon Integrated Circuits on Plastic

Nano letters, 2013-01, Vol.13 (1), p.315-320

2013

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Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Advanced energy materials, 2013-05, Vol.3 (5), p.566-571

2013

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Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Communications materials, 2024-01, Vol.5 (1), p.151-10

2024

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

2013

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Vertical Light-Emitting Diode Fabrication by Controlled Spalling

Applied physics express, 2013-11, Vol.6 (11), p.112301

2013

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Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries

iScience, 2020-10, Vol.23 (10), p.101586-101586, Article 101586

2020

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CMOS-integrated high-speed MSM germanium waveguide photodetector

Optics express, 2010-03, Vol.18 (5), p.4986-4999

2010

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Layer transfer by controlled spalling

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.152002-1-6

2013

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Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus

Applied physics letters, 2011-02, Vol.98 (8)

2011

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Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

IEEE journal of photovoltaics, 2012-04, Vol.2 (2), p.141-147

2012

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Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast

Applied physics letters, 2017-06, Vol.110 (23)

2017

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CMOS-Compatible Wearable Sensors Fabricated Using Controlled Spalling

IEEE sensors journal, 2019-09, Vol.19 (18), p.7868-7874

2019

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Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

IEEE electron device letters, 2008-07, Vol.29 (7), p.811-813

2008

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High-throughput, nondestructive assessment of defects in patterned epitaxial films on silicon by machine learning-enabled broadband plasma optical measurements

2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2019, p.1-4

2019

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Investigation of surface blistering of hydrogen implanted crystals

Journal of applied physics, 2001-08, Vol.90 (3), p.1138-1146

2001

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Stress determination through diffraction: establishing the link between Kröner and Voigt/Reuss limits

Powder diffraction, 2015-06, Vol.30 (2), p.99-103

2015

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Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013)

Advanced energy materials, 2013-05, Vol.3 (5), p.542-542

2013

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Flexible InGaP/(In)GaAs tandem solar cells with very high specific power

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2805-2808

2013

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Opportunities and Challenges for Germanium and Silicon-Germanium Channel p-FETs

ECS transactions, 2009, Vol.19 (1), p.155-164

2009

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Germanium channel MOSFETs: Opportunities and challenges

IBM journal of research and development, 2006-07, Vol.50 (4.5), p.377-386

2006

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Weighted mechanical models for residual stress determination using x-ray diffraction

Journal of applied physics, 2013-07, Vol.114 (3)

2013

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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Layer-Resolved Graphene Transfer via Engineered Strain Layers

Extremely Flexible Nanoscale Ultrathin Body Silicon Integrated Circuits on Plastic

Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Vertical Light-Emitting Diode Fabrication by Controlled Spalling

Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries

CMOS-integrated high-speed MSM germanium waveguide photodetector

Layer transfer by controlled spalling

Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus

Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast

CMOS-Compatible Wearable Sensors Fabricated Using Controlled Spalling

Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

High-throughput, nondestructive assessment of defects in patterned epitaxial films on silicon by machine learning-enabled broadband plasma optical measurements

Investigation of surface blistering of hydrogen implanted crystals

Stress determination through diffraction: establishing the link between Kröner and Voigt/Reuss limits

Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013)

Flexible InGaP/(In)GaAs tandem solar cells with very high specific power

Opportunities and Challenges for Germanium and Silicon-Germanium Channel p-FETs

Germanium channel MOSFETs: Opportunities and challenges

Weighted mechanical models for residual stress determination using x-ray diffraction

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