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Nickel based catalysts derived from hydrothermally synthesized 1:1 and 2:1 phyllosilicates as precursors for carbon dioxide reforming of methane

Microporous and mesoporous materials, 2011-04, Vol.140 (1), p.69-80

2011

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The mechanisms of surface exfoliation in H and He implanted Si crystals

Scripta materialia, 2011-12, Vol.65 (12), p.1045-1048

2011

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Formation mechanisms of Ti2AlC MAX phase on SiC-4H using magnetron sputtering and post-annealing

Materials & Design, 2018-04, Vol.144, p.209-213

2018

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Mobility of daughter elements of 238U decay chain during leaching by In Situ Recovery (ISR): New insights from digital autoradiography

Journal of environmental radioactivity, 2020-09, Vol.220-221, p.106274-106274, Article 106274

2020

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In-situ evolution of helium bubbles in SiC under irradiation

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Study of uniaxial deformation behavior of 50 nm-thick thin film of gold single crystal using in situ X-ray pole figure measurements

Surface & coatings technology, 2019-11, Vol.377, p.124878, Article 124878

2019

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Effect of temperature on Xe implantation-induced damage in 4H-SiC

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12015, Article 012015

2019

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Ion beam assisted deposition of TiN–Ni nanocomposite coatings

Surface & coatings technology, 2011-11, Vol.206 (5), p.972-975

2011

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Applied surface science, 2015-08, Vol.347, p.186-192

2015

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Swelling and stacking fault formation in helium implanted SiC

Journal of nuclear materials, 2011-06, Vol.413 (3), p.162-165

2011

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Swelling of SiC under helium implantation

Journal of applied physics, 2005-12, Vol.98 (11), p.113506-113506-6

2005

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Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Thin solid films, 2012-08, Vol.520 (21), p.6709-6717

2012

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Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature

Journal of nuclear materials, 2010-02, Vol.397 (1), p.132-134

2010

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In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Formation mechanisms of Ti 2 AlC MAX phase on SiC-4H using magnetron sputtering and post-annealing

Materials & Design, 2018-04, Vol.144, p.209-213

2018

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Nanoscale organization by elastic interactions between H and He platelets in Si

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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On the microstructure of Si coimplanted with H + and He + ions at moderate energies

Journal of applied physics, 2010-07, Vol.108 (2), p.023502-023502-6

2010

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Strain buildup in 4H-SiC implanted with noble gases at low dose

Materials today : proceedings, 2018, Vol.5 (6), p.14722-14731

2018

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Evolution of mechanical properties of SiC under helium implantation

Journal of nuclear materials, 2008-02, Vol.373 (1), p.142-149

2008

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Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Journal of applied physics, 2013-02, Vol.113 (8)

2013

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Helium implantation into 4H-SiC

Physica status solidi. A, Applications and materials science, 2009-08, Vol.206 (8), p.1916-1923

2009

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Optical and nuclear characterization of Xe-induced nanoporosity in SiO 2

Thin solid films, 2010-06, Vol.518 (16), p.4721-4725

2010

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Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study

Journal of applied physics, 2011-09, Vol.110 (5)

2011

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Optical and nuclear characterization of Xe-induced nanoporosity in SiO2

Thin solid films, 2010-06, Vol.518 (16), p.4721-4725

2010

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DFT calculation of the stability and mobility of noble gas atoms in silicon

Computational materials science, 2009-02, Vol.44 (4), p.1030-1033

2009

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Nickel based catalysts derived from hydrothermally synthesized 1:1 and 2:1 phyllosilicates as precursors for carbon dioxide reforming of methane

The mechanisms of surface exfoliation in H and He implanted Si crystals

Formation mechanisms of Ti2AlC MAX phase on SiC-4H using magnetron sputtering and post-annealing

Mobility of daughter elements of 238U decay chain during leaching by In Situ Recovery (ISR): New insights from digital autoradiography

In-situ evolution of helium bubbles in SiC under irradiation

Study of uniaxial deformation behavior of 50 nm-thick thin film of gold single crystal using in situ X-ray pole figure measurements

Effect of temperature on Xe implantation-induced damage in 4H-SiC

Ion beam assisted deposition of TiN–Ni nanocomposite coatings

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Swelling and stacking fault formation in helium implanted SiC

Swelling of SiC under helium implantation

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature

In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Formation mechanisms of Ti 2 AlC MAX phase on SiC-4H using magnetron sputtering and post-annealing

Nanoscale organization by elastic interactions between H and He platelets in Si

On the microstructure of Si coimplanted with H + and He + ions at moderate energies

Strain buildup in 4H-SiC implanted with noble gases at low dose

Evolution of mechanical properties of SiC under helium implantation

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Helium implantation into 4H-SiC

Optical and nuclear characterization of Xe-induced nanoporosity in SiO 2

Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study

Optical and nuclear characterization of Xe-induced nanoporosity in SiO2

DFT calculation of the stability and mobility of noble gas atoms in silicon

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