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GaAs1-xBix light emitting diodes

Journal of crystal growth, 2009-03, Vol.311 (7), p.1872-1875

2009

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Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Journal of crystal growth, 2012, Vol.338 (1), p.107-110

2012

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Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers

Journal of crystal growth, 2014-04, Vol.392, p.74-80

2014

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Exploring Ocean Biogeochemistry Using a Lab-on-Chip Phosphate Analyser on an Underwater Glider

Frontiers in Marine Science, 2021-07, Vol.8

2021

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Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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Surface reconstructions during growth of GaAs1―xBix alloys by molecular beam epitaxy

Journal of crystal growth, 2012, Vol.338 (1), p.80-84

2012

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Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant

Journal of crystal growth, 2012-07, Vol.351 (1), p.122-125

2012

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Determination of the direct to indirect bandgap transition composition in AlxIn1−xP

Journal of applied physics, 2013-11, Vol.114 (20)

2013

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Magnetic-field-induced delocalized to localized transformation in GaAs:N

Physical review letters, 2013-04, Vol.110 (15), p.156405-156405, Article 156405

2013

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Composition dependence of photoluminescence of GaAs1−xBix alloys

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

Applied physics letters, 2008-05, Vol.92 (19)

2008

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Deep level defects in GaAs1−xBix/GaAs heterostructures

Semiconductor science and technology, 2011-05, Vol.26 (5), p.055020

2011

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Insight into the epitaxial growth of high optical quality GaAs1–xBix

Journal of applied physics, 2015-12, Vol.118 (23)

2015

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Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Journal of applied physics, 2019-04, Vol.125 (14)

2019

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Carbon dating reveals a seasonal progression in the source of particulate organic carbon exported from the Greenland Ice Sheet

Geophysical research letters, 2017-06, Vol.44 (12), p.6209-6217

2017

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Fermi energy tuning with light to control doping profiles during epitaxy

Applied physics letters, 2015-05, Vol.106 (18)

2015

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Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

Semiconductor science and technology, 2016-07, Vol.31 (8), p.85014

2016

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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Journal of applied physics, 2013-04, Vol.113 (13)

2013

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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]

Journal of applied physics, 2015-01, Vol.117 (1)

2015

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A systematic review of interventions to promote work participation in older workers

Journal of safety research, 2017-02, Vol.60, p.93-102

2017

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Recombination mechanisms and band alignment of GaAs 1−x Bi x /GaAs light emitting diodes

Applied physics letters, 2012-01, Vol.100 (5), p.051105-051105-3

2012

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Carrier-phonon coupling in GaAs1−xBix/GaAs quantum wells

Semiconductor science and technology, 2012-08, Vol.27 (8)

2012

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Bismuth incorporation in GaAs1-xBix grown by molecular beam epitaxy with in-situ light scattering

Physica status solidi. C, 2007-04, Vol.4 (5), p.1707-1710

2007

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Insight into the epitaxial growth of high optical quality GaAs{sub 1–x}Bi{sub x}

Journal of applied physics, 2015-12, Vol.118 (23)

2015

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Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x

Journal of applied physics, 2015-12, Vol.118 (23)

2015

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GaAs1-xBix light emitting diodes

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers

Exploring Ocean Biogeochemistry Using a Lab-on-Chip Phosphate Analyser on an Underwater Glider

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Surface reconstructions during growth of GaAs1―xBix alloys by molecular beam epitaxy

Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant

Determination of the direct to indirect bandgap transition composition in AlxIn1−xP

Magnetic-field-induced delocalized to localized transformation in GaAs:N

Composition dependence of photoluminescence of GaAs1−xBix alloys

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

Deep level defects in GaAs1−xBix/GaAs heterostructures

Insight into the epitaxial growth of high optical quality GaAs1–xBix

Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

Carbon dating reveals a seasonal progression in the source of particulate organic carbon exported from the Greenland Ice Sheet

Fermi energy tuning with light to control doping profiles during epitaxy

Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]

A systematic review of interventions to promote work participation in older workers

Recombination mechanisms and band alignment of GaAs 1−x Bi x /GaAs light emitting diodes

Carrier-phonon coupling in GaAs1−xBix/GaAs quantum wells

Bismuth incorporation in GaAs1-xBix grown by molecular beam epitaxy with in-situ light scattering

Insight into the epitaxial growth of high optical quality GaAs{sub 1–x}Bi{sub x}

Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x

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