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Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy

Applied physics letters, 1987-03, Vol.50 (9), p.516-518

1987

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Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

Semiconductor science and technology, 1991-06, Vol.6 (6), p.535-546

1991

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The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

Journal of applied physics, 1989-09, Vol.66 (6), p.2589-2596

1989

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Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be : a comparative study

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.239-245

1991

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Measurement of narrow Si dopant distributions in GaAs by SIMS

Surface and interface analysis, 1989-06, Vol.14 (6-7), p.307-314

1989

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Migration of Si in δ-doped GaAs

Semiconductor science and technology, 1988-06, Vol.3 (6), p.612-615

1988

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Post-growth diffusion of Si in delta -doped GaAs grown by MBE

Semiconductor science and technology, 1989-12, Vol.4 (12), p.1171-1175

1989

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Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

Journal of applied physics, 1991-01, Vol.69 (2), p.971-974

1991

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Fano profiles of absorption lines from the localised vibrational modes of Be acceptors in GaAs and B acceptors in silicon

Semiconductor science and technology, 1989-06, Vol.4 (6), p.423-426

1989

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W-band GaAs camel-cathode gunn devices produced by MBE

Electronics letters, 1989-06, Vol.25 (13), p.871-873

1989

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The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma

Semiconductor science and technology, 1988-04, Vol.3 (4), p.356-360

1988

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Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAs

Semiconductor science and technology, 1990-07, Vol.5 (7), p.785-788

1990

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The influence of measurement in the development of management science

Omega (Oxford), 1974-01, Vol.2 (5), p.593-605

Beall, R.B.

1974

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Pressure-dependent measurements on n+ GaAs (Si, Sn): the effect of deep donor (DX) states on the electrical properties and persistent photoconductivity

Physica scripta, 1988-10, Vol.38 (4), p.605-608

1988

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Investigation of the DX center in heavily doped n-GaAs

Physical review letters, 1987-08, Vol.59 (7), p.815-818

1987

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Site switching of silicon in neutron-irradiated and annealed gallium arsenide by vacancy migration

Journal of physics. C, Solid state physics, 1986-04, Vol.19 (12), p.1897-1907

1986

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The generation by electron irradiation of arsenic anti-site defects in n-type GaAs

Journal of physics. C, Solid state physics, 1984-05, Vol.17 (15), p.2653-2659

1984

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The observation of antisite defects in n-type and undoped GaAs following electron irradiation and annealing

Journal of physics. C, Solid state physics, 1985-06, Vol.18 (17), p.3273-3283

1985

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The production and structure of the P-P3 anti-site defect in electron-irradiated n-type GaP

Journal of physics. C, Solid state physics, 1984-01, Vol.17 (36), p.L963-L968

1984

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On the mechanism of formation of AsGa+ anti-site defects in electron-irradiated n-type GaAs

Journal of physics. C, Solid state physics, 1985-09, Vol.18 (25), p.L763-L767

1985

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Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs

Journal of applied physics, 1985-06, Vol.57 (12), p.5196-5198

1985

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Observation of surface plasmons in doped superlattices using far infrared attenuated total reflection

Solid state communications, 1991, Vol.77 (4), p.253-256

1991

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Observation of surface and bulk plasmons in semiconductor superlattices

Superlattices and microstructures, 1991, Vol.9 (4), p.517-520

1991

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Arsenic antisite defects and other paramagnetic centres in neutron irradiated and annealed GaAs

Journal of physics. C, Solid state physics, 1986-07, Vol.19 (20), p.3745-3752

1986

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Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structures

Journal of crystal growth, 1989-02, Vol.95 (1), p.257-259

1989

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Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be : a comparative study

Measurement of narrow Si dopant distributions in GaAs by SIMS

Migration of Si in δ-doped GaAs

Post-growth diffusion of Si in delta -doped GaAs grown by MBE

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

Fano profiles of absorption lines from the localised vibrational modes of Be acceptors in GaAs and B acceptors in silicon

W-band GaAs camel-cathode gunn devices produced by MBE

The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma

Migration processes of co-doped Si and Be delta-planes in MBE-grown GaAs

The influence of measurement in the development of management science

Pressure-dependent measurements on n+ GaAs (Si, Sn): the effect of deep donor (DX) states on the electrical properties and persistent photoconductivity

Investigation of the DX center in heavily doped n-GaAs

Site switching of silicon in neutron-irradiated and annealed gallium arsenide by vacancy migration

The generation by electron irradiation of arsenic anti-site defects in n-type GaAs

The observation of antisite defects in n-type and undoped GaAs following electron irradiation and annealing

The production and structure of the P-P3 anti-site defect in electron-irradiated n-type GaP

On the mechanism of formation of AsGa+ anti-site defects in electron-irradiated n-type GaAs

Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs

Observation of surface plasmons in doped superlattices using far infrared attenuated total reflection

Observation of surface and bulk plasmons in semiconductor superlattices

Arsenic antisite defects and other paramagnetic centres in neutron irradiated and annealed GaAs

Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structures

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