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Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy

Semiconductor science and technology, 2004-02, Vol.19 (2), p.247-251

2004

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Simultaneous micro-Raman and photoluminescence study of spark-processed germanium: Report on the origin of the orange photoluminescence emission band

Journal of applied physics, 2004-04, Vol.95 (7), p.3466-3472

2004

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The culture of neurons on silicon

Sensors and actuators. A, Physical, 1999-04, Vol.74 (1), p.139-142

1999

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Biologically Interfaced Porous Silicon Devices

Physica status solidi. A, Applied research, 2000-11, Vol.182 (1), p.505-513

2000

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Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matrices

Applied physics letters, 1995-04, Vol.66 (15), p.1977-1979

1995

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Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices

Optical materials, 2001-06, Vol.17 (1), p.79-82

2001

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Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films

Physica status solidi. A, Applied research, 2003-05, Vol.197 (1), p.263-268

2003

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Photovoltaic effects from porous Si

Journal of physics. D, Applied physics, 1997-10, Vol.30 (19), p.2763-2769

1997

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Nature of the Silicon-Animal Cell Interface

Journal of porous materials, 2000-01, Vol.7 (1-3), p.191-195

2000

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Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures

Semiconductor science and technology, 2004-01, Vol.19 (1), p.100-105

2004

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Pressure-induced crossover between diffusive and displacive mechanisms of phase transitions in single-crystalline alpha-GeO2

Physical review letters, 2003-04, Vol.90 (14), p.145503-145503

2003

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Study of the porous polycrystalline silicon formation process

Semiconductor science and technology, 2004-12, Vol.19 (12), p.1343-1347

2004

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Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon

Solid-state electronics, 2001-09, Vol.45 (9), p.1607-1611

2001

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Silicon oxynitride as a tunable optical material

Journal of physics. Condensed matter, 1994-06, Vol.6 (26), p.4961-4970

1994

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The stable blue and unstable UV photoluminescence from carbon nanoclusters embedded in SiO2 matrices

Solid state communications, 1996-09, Vol.99 (12), p.883-886

1996

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High-Pressure High-Temperature Studies of Structural Ordering in GaSb

Physica status solidi. B. Basic research, 2001-01, Vol.223 (2), p.405-409

2001

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A structural and optical study of sputtered InP films as a function of preparation temperature

Journal of physics. Condensed matter, 1996-03, Vol.8 (10), p.1591-1605

1996

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Patterns of cross‐resistance and collateral sensitivity between clinical antibiotics and natural antimicrobials

Evolutionary applications, 2019-06, Vol.12 (5), p.878-887

2019

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The preparation and characterisation of gallium nitride using the Hi-Prexx facility

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.120-122

2001

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An analysis of photoluminescence voltage quenching and band structure of nanoporous silicon

Thin solid films, 1998-08, Vol.326 (1), p.194-200

1998

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The effect of varying substrate temperature on the structural and optical properties of sputtered GaAs films

Journal of physics. Condensed matter, 1993-02, Vol.5 (5), p.519-534

1993

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The optical and structural properties of InGaN epilayers with very high indium content

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.292-297

1999

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Phosphate and cell growth on nanostructured semiconductors

Journal of materials science letters, 1997, Vol.16 (9), p.737-740

1997

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Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.288-291

1999

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On the origin of the 2.2–2.3 eV photoluminescence from chemically etched germanium

Journal of luminescence, 2003-04, Vol.101 (4), p.275-283

2003

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Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy

Simultaneous micro-Raman and photoluminescence study of spark-processed germanium: Report on the origin of the orange photoluminescence emission band

The culture of neurons on silicon

Biologically Interfaced Porous Silicon Devices

Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matrices

Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices

Observation of phonon confinement in SiGe nanocrystals and preferential etching of Si in porous Si1-xGex films

Photovoltaic effects from porous Si

Nature of the Silicon-Animal Cell Interface

Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures

Pressure-induced crossover between diffusive and displacive mechanisms of phase transitions in single-crystalline alpha-GeO2

Study of the porous polycrystalline silicon formation process

Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon

Silicon oxynitride as a tunable optical material

The stable blue and unstable UV photoluminescence from carbon nanoclusters embedded in SiO2 matrices

High-Pressure High-Temperature Studies of Structural Ordering in GaSb

A structural and optical study of sputtered InP films as a function of preparation temperature

Patterns of cross‐resistance and collateral sensitivity between clinical antibiotics and natural antimicrobials

The preparation and characterisation of gallium nitride using the Hi-Prexx facility

An analysis of photoluminescence voltage quenching and band structure of nanoporous silicon

The effect of varying substrate temperature on the structural and optical properties of sputtered GaAs films

The optical and structural properties of InGaN epilayers with very high indium content

Phosphate and cell growth on nanostructured semiconductors

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

On the origin of the 2.2–2.3 eV photoluminescence from chemically etched germanium

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