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On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices

Journal of applied physics, 2021-09, Vol.130 (12)

2021

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Quantitative Auger Electron Spectroscopic Analysis of Hg1−xCdxTe

Journal of electronic materials, 2014, Vol.43 (4), p.1255-1262

2014

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Characterization of Plasma Etching Process Damage in HgCdTe

Journal of electronic materials, 2013-11, Vol.42 (11), p.3006-3014

2013

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HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

Journal of electronic materials, 2009-08, Vol.38 (8), p.1684-1689

2009

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Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach

Journal of electronic materials, 2011-08, Vol.40 (8), p.1823-1829

2011

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Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−xCdxTe

Journal of electronic materials, 2010, Vol.39 (8), p.1256-1261

2010

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Status of HgCdTe bicolor and dual-band infrared focal arrays at LETI

Journal of electronic materials, 2007-08, Vol.36 (8), p.1031-1044

2007

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Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

Journal of electronic materials, 2006-06, Vol.35 (6), p.1231-1236

2006

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Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors

Journal of electronic materials, 2004-06, Vol.33 (6), p.690-700

2004

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Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

Journal of electronic materials, 2005-06, Vol.34 (6), p.740-745

2005

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TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-μm pitch and spatial coherence

Journal of electronic materials, 2006-06, Vol.35 (6), p.1153-1158

2006

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Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

Journal of electronic materials, 2004-06, Vol.33 (6), p.667-672

2004

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XPS, Raman spectroscopy, X-ray diffraction, specular X-ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization

Surface and interface analysis, 2001-03, Vol.31 (3), p.185-190

2001

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Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg^sub 1-x^Cd^sub x^Te

Journal of electronic materials, 2014-07, Vol.43 (7), p.2770

2014

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Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd x Te

Journal of electronic materials, 2014-07, Vol.43 (7), p.2770-2770

2014

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Quantitative Auger Electron Spectroscopic Analysis of Hg1−x Cd x Te

Journal of electronic materials, 2014-04, Vol.43 (4), p.1255-1262

2014

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Quantitative Auger Electron Spectroscopic Analysis of Hg^sub 1-x^Cd^sub x^Te

Journal of electronic materials, 2014-04, Vol.43 (4), p.1255

2014

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Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg1-xCdxTe

Journal of electronic materials, 2014, Vol.43 (7), p.2770-2770

2014

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Recent developments of high-complexity HgCdTe focal plane arrays at LETI infrared laboratory

Journal of electronic materials, 2003-07, Vol.32 (7), p.592-601

2003

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Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−x Cd x Te

Journal of electronic materials, 2010-08, Vol.39 (8), p.1256-1261

2010

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Influence of Cadmium Composition on CH^sub 4^-H^sub 2^-Based Inductively Coupled Plasma Etching of Hg^sub 1-x^Cd^sub x^Te

Journal of electronic materials, 2010-08, Vol.39 (8), p.1256

2010

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Influence of Cadmium Composition on CH4-H2-Based Inductively Coupled Plasma Etching of Hg(1-x)CdxTe

Journal of electronic materials, 2010, Vol.39 (8)

2010

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Effect of Ar and N2 addition on CH4–H2 based chemistry inductively coupled plasma etching of HgCdTe

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-07, Vol.27 (4), p.855-861

2009

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Effect of Ar and N 2 addition on C H 4 – H 2 based chemistry inductively coupled plasma etching of HgCdTe

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-07, Vol.27 (4), p.855-861

2009

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Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-07, Vol.27 (4)

2009

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On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices

Quantitative Auger Electron Spectroscopic Analysis of Hg1−xCdxTe

Characterization of Plasma Etching Process Damage in HgCdTe

HgCdTe p-on-n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth

Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach

Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−xCdxTe

Status of HgCdTe bicolor and dual-band infrared focal arrays at LETI

Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-μm pitch and spatial coherence

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

XPS, Raman spectroscopy, X-ray diffraction, specular X-ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization

Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg^sub 1-x^Cd^sub x^Te

Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd x Te

Quantitative Auger Electron Spectroscopic Analysis of Hg1−x Cd x Te

Quantitative Auger Electron Spectroscopic Analysis of Hg^sub 1-x^Cd^sub x^Te

Erratum to: Quantitative Auger Electron Spectroscopy Analysis of Hg1-xCdxTe

Recent developments of high-complexity HgCdTe focal plane arrays at LETI infrared laboratory

Influence of Cadmium Composition on CH4–H2-Based Inductively Coupled Plasma Etching of Hg1−x Cd x Te

Influence of Cadmium Composition on CH^sub 4^-H^sub 2^-Based Inductively Coupled Plasma Etching of Hg^sub 1-x^Cd^sub x^Te

Influence of Cadmium Composition on CH4-H2-Based Inductively Coupled Plasma Etching of Hg(1-x)CdxTe

Effect of Ar and N2 addition on CH4–H2 based chemistry inductively coupled plasma etching of HgCdTe

Effect of Ar and N 2 addition on C H 4 – H 2 based chemistry inductively coupled plasma etching of HgCdTe

Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe

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