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The electronic structure at the atomic scale of ultrathin gate oxides

Nature (London), 1999-06, Vol.399 (6738), p.758-761

1999

Volltextzugriff (PDF)

Microstructure Modulation in Copper Interconnects

IEEE electron device letters, 2014-05, Vol.35 (5), p.572-574

2014

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Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography

Physical review letters, 1999-03, Vol.82 (12), p.2614-2617

1999

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Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations

Journal of applied physics, 2003-07, Vol.94 (1), p.263-271

2003

Volltextzugriff (PDF)

Electron holography of devices with epitaxial layers

Journal of applied physics, 2014-11, Vol.116 (17)

2014

Volltextzugriff (PDF)

Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

MRS bulletin, 2001-03, Vol.26 (3), p.182-189

2001

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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Applied physics letters, 1998-11, Vol.73 (20), p.2980-2982

1998

Volltextzugriff (PDF)

Electron Holography of CMOS Devices with Epitaxial Layers

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.252-253

2014

Volltextzugriff (PDF)

An approach to quantitative high-resolution transmission electron microscopy of crystalline materials

Ultramicroscopy, 1995-05, Vol.58 (2), p.131-155

1995

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Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy

Physical review letters, 1993-12, Vol.71 (25), p.4150-4153

1993

Volltextzugriff (PDF)

Quantitative chemical lattice imaging: theory and practice

Ultramicroscopy, 1990-12, Vol.34 (4), p.237-255

1990

Volltextzugriff (PDF)

Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

IEEE electron device letters, 2002-01, Vol.23 (1), p.22-24

2002

Volltextzugriff (PDF)

Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

Applied physics letters, 1999-03, Vol.74 (9), p.1260-1262

1999

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Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors

Physical review letters, 1994-07, Vol.73 (3), p.448-451

1994

Volltextzugriff (PDF)

Effect of implant damage on the gate oxide thickness

Solid-state electronics, 1999, Vol.43 (5), p.985-988

1999

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Quantitative chemical mapping: Spatial resolution

Ultramicroscopy, 1992-11, Vol.47 (1), p.167-172

1992

Volltextzugriff (PDF)

Chemical lattice imaging of a Ni-based superalloy

Philosophical magazine letters, 1991-11, Vol.64 (5), p.269-276

1991

Volltextzugriff (PDF)

Mein Urgrossvater Christian Batschelet (1813 – 1897), Tierarzt in Walperswil (BE)

Schweizer Archiv für Tierheilkunde, 2010-01, Vol.152 (1), p.37-46

Baumann, F. H.

2010

Volltextzugriff (PDF)

Quantitative strain mapping using high-resolution electron microscopy

Physica status solidi. A, Applied research, 1995-08, Vol.150 (2), p.625-634

1995

Volltextzugriff (PDF)

Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence

Applied surface science, 1993, Vol.63 (1), p.187-190

1993

Volltextzugriff (PDF)

Gold silicide precipitates in silicon

Philosophical magazine letters, 1988-02, Vol.57 (2), p.75-80

1988

Volltextzugriff (PDF)

Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition

Applied physics letters, 1992-07, Vol.61 (1), p.28-30

1992

Volltextzugriff (PDF)

Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3F.4.1-3F.4.6

2013

Volltextzugriff (PDF)

Enhanced electromigration resistance through grain size modulation in copper interconnects

2015 China Semiconductor Technology International Conference, 2015, p.1-5

2015

Volltextzugriff (PDF)

Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.891-894

1992

Volltextzugriff (PDF)

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The electronic structure at the atomic scale of ultrathin gate oxides

Microstructure Modulation in Copper Interconnects

Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography

Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations

Electron holography of devices with epitaxial layers

Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

Electron Holography of CMOS Devices with Epitaxial Layers

An approach to quantitative high-resolution transmission electron microscopy of crystalline materials

Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopy

Quantitative chemical lattice imaging: theory and practice

Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors

Effect of implant damage on the gate oxide thickness

Quantitative chemical mapping: Spatial resolution

Chemical lattice imaging of a Ni-based superalloy

Mein Urgrossvater Christian Batschelet (1813 – 1897), Tierarzt in Walperswil (BE)

Quantitative strain mapping using high-resolution electron microscopy

Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence

Gold silicide precipitates in silicon

Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition

Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

Enhanced electromigration resistance through grain size modulation in copper interconnects

Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE

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