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Improving device performance of sputtered CZTSe based solar cells by Manganese doping

Optical materials, 2024-03, Vol.149, p.115138, Article 115138

2024

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Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM)

ECS transactions, 2020-09, Vol.98 (5), p.405-411

2020

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Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.757-760

2022

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Effect of ultra-thin CdSexTe1−x interface layer on parameters of CdTe solar cells

Solar energy, 2022-03, Vol.234, p.128-136

2022

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Enhancement of the response speed of CIGS-based photodetector by Te-doping

Sensors and actuators. A. Physical., 2024-10, Vol.377, p.115691, Article 115691

2024

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Measuring activation depth profiles in very highly doped ultra-thin semiconductors at sub-nm depth resolution

MRS advances, 2023-01, Vol.7 (36), p.1326-1330

2023

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Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology

Journal of materials science. Materials in electronics, 2022-07, Vol.33 (20), p.16272-16285

2022

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Investigation of growth temperature effects on SnSe-based photodetector performance

Journal of materials science. Materials in electronics, 2023-09, Vol.34 (27), p.1866, Article 1866

2023

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Photodetector properties of CdSe thin films grown by close space sublimation method

Journal of materials science. Materials in electronics, 2023-09, Vol.34 (25), p.1749, Article 1749

2023

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Improvement in performance of SnSe-based photodetectors via post deposition sulfur diffusion

Sensors and actuators. A. Physical., 2024-07, Vol.372, p.115348, Article 115348

2024

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Processing CdS- and CdSe-containing window layers for CdTe solar cells

Journal of physics. D, Applied physics, 2021-05, Vol.54 (21), p.215103

2021

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Improved CZTSe solar cell efficiency via silver and germanium alloying

Solar energy, 2024-01, Vol.267, p.112247, Article 112247

2024

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(Invited) Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge

ECS transactions, 2020-04, Vol.97 (3), p.75-80

2020

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Deposition of CdSeTe alloys using CdTe—CdSe mixed powder source material in a close-space sublimation process

Journal of materials science. Materials in electronics, 2021-04, Vol.32 (7), p.9685-9693

2021

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Effect of CdS and CdSe pre-treatment on interdiffusion with CdTe in CdS/CdTe and CdSe/CdTe heterostructures

Materials science in semiconductor processing, 2021-06, Vol.128, p.105750, Article 105750

2021

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Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

IEEE transactions on semiconductor manufacturing, 2021-08, Vol.34 (3), p.357-364

2021

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Cu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35011

2019

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Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers

Metrology, 2024-10, Vol.4 (4), p.547-565

2024

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Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)

ECS transactions, 2022-09, Vol.109 (4), p.329-333

2022

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Mechanically Induced Growth Rate Differential for Copper Layers Electroplated in Presence of Organic Additives

Journal of the Electrochemical Society, 2006, Vol.153 (10), p.C683

2006

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Study of Dopant Activation in Si Employing Differential Hall Effect Metrology (DHEM)

2021 20th International Workshop on Junction Technology (IWJT), 2021, p.1-3

2021

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Electrochemical Co-deposition of In-Se and Ga-Se Thin Films for Preparation of CIGS Solar Cells

MRS proceedings, 2008, Vol.1113 (1), Article 1113-F08-03

2008

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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

Applied physics express, 2022-06, Vol.15 (6), p.61002

2022

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(Invited) Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)

ECS transactions, 2021-05, Vol.102 (2), p.113-116

2021

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Dopant Activation Depth Profiling for Highly Doped Si:P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)

ECS transactions, 2022-05, Vol.108 (5), p.9-15

2022

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Improving device performance of sputtered CZTSe based solar cells by Manganese doping

Sub-nm Near-Surface Activation Profiling for Highly Doped Si and Ge Using Differential Hall Effect Metrology (DHEM)

Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)

Effect of ultra-thin CdSexTe1−x interface layer on parameters of CdTe solar cells

Enhancement of the response speed of CIGS-based photodetector by Te-doping

Measuring activation depth profiles in very highly doped ultra-thin semiconductors at sub-nm depth resolution

Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology

Investigation of growth temperature effects on SnSe-based photodetector performance

Photodetector properties of CdSe thin films grown by close space sublimation method

Improvement in performance of SnSe-based photodetectors via post deposition sulfur diffusion

Processing CdS- and CdSe-containing window layers for CdTe solar cells

Improved CZTSe solar cell efficiency via silver and germanium alloying

(Invited) Differential Hall Effect Metrology (DHEM) Sub-Nm Profiling and Its Application to Dopant Activation in n-Type Ge

Deposition of CdSeTe alloys using CdTe—CdSe mixed powder source material in a close-space sublimation process

Effect of CdS and CdSe pre-treatment on interdiffusion with CdTe in CdS/CdTe and CdSe/CdTe heterostructures

Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

Cu(In,Ga)Te 2 film growth by a two-stage technique utilizing rapid thermal processing

Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers

Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)

Mechanically Induced Growth Rate Differential for Copper Layers Electroplated in Presence of Organic Additives

Study of Dopant Activation in Si Employing Differential Hall Effect Metrology (DHEM)

Electrochemical Co-deposition of In-Se and Ga-Se Thin Films for Preparation of CIGS Solar Cells

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

(Invited) Characterization of Annealing and Dopant Activation Processes Using Differential Hall Effect Metrology (DHEM)

Dopant Activation Depth Profiling for Highly Doped Si:P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)

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