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Deep level defects in GaAs1−xBix/GaAs heterostructures

Semiconductor science and technology, 2011-05, Vol.26 (5), p.055020

2011

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Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors

Journal of applied physics, 2014-11, Vol.116 (19)

2014

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Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Journal of applied physics, 2011-03, Vol.109 (6)

2011

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Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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On cardinality bounds for θn-Urysohn spaces

Acta mathematica Hungarica, 2019, Vol.159 (1), p.109-123

2019

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Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

Journal of applied physics, 2011-06, Vol.109 (11), p.114505-114505-8

2011

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Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Journal of applied physics, 2013-04, Vol.113 (13)

2013

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces

Journal of applied physics, 2012-05, Vol.111 (9)

2012

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Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]

Journal of applied physics, 2015-01, Vol.117 (1)

2015

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Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75009

2014

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Monotone versions of some selection principles II

Topology and its applications, 2020-04, Vol.275, p.107148, Article 107148

2020

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Monotone versions of some selection principles

Topology and its applications, 2019-05, Vol.258, p.177-186

2019

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The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

IEEE electron device letters, 2004-08, Vol.25 (8), p.517-519

2004

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Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO 2 /SiC interfaces

Journal of applied physics, 2012-05, Vol.111 (9), p.094509-094509-13

2012

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Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1733-1740

2003

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Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 114115 (2011)]

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Origin of hole-like peaks in current deep level transient spectroscopy of n -channel AlGaAs/GaAs heterostructure field-effect transistors

Journal of applied physics, 2003-10, Vol.94 (8), p.5297-5301

2003

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Violent Behavior in Acute Psychiatric Inpatient Facilities: A National Survey in Italy

The journal of nervous and mental disease, 2009-10, Vol.197 (10), p.772-782

2009

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Patterns of admission to acute psychiatric in-patient facilities: a national survey in Italy

Psychological medicine, 2009-03, Vol.39 (3), p.485-496

2009

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Use of psychiatric inpatient services by heavy users: Findings from a national survey in Italy

European psychiatry, 2011-05, Vol.26 (4), p.252-259

2011

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Effects of sodium ions on trapping and transport of electrons at the SiO{sub 2}/4H-SiC interface

Journal of applied physics, 2014-01, Vol.115 (3)

2014

Volltextzugriff (PDF)

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Deep level defects in GaAs1−xBix/GaAs heterostructures

Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics

Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces

On cardinality bounds for θn-Urysohn spaces

Electron trapping in 4H-SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation

Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO2/SiC interfaces

Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]

Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Monotone versions of some selection principles II

Monotone versions of some selection principles

The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

Modeling of high-frequency capacitance-voltage characteristics to quantify trap distributions near SiO 2 /SiC interfaces

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 114115 (2011)]

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Origin of hole-like peaks in current deep level transient spectroscopy of n -channel AlGaAs/GaAs heterostructure field-effect transistors

Violent Behavior in Acute Psychiatric Inpatient Facilities: A National Survey in Italy

Patterns of admission to acute psychiatric in-patient facilities: a national survey in Italy

Use of psychiatric inpatient services by heavy users: Findings from a national survey in Italy

Effects of sodium ions on trapping and transport of electrons at the SiO{sub 2}/4H-SiC interface

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