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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Barraud, Sylvain

2011

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Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Applied physics letters, 2019-03, Vol.114 (12)

2019

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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Nano letters, 2016-03, Vol.16 (3), p.1614-1619

2016

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2012-11, Vol.101 (21), p.213502

2012

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pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Biosensors (Basel), 2023-09, Vol.13 (10), p.908

2023

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Less mobility degradation induced by transverse electric-field in junctionless transistors

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Low-temperature electrical characterization of junctionless transistors

Solid-state electronics, 2013-02, Vol.80, p.135-141

2013

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Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.492-499

2021

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Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical Sensing

Micromachines (Basel), 2021-06, Vol.12 (7), p.762

2021

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

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Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Physical review. X, 2015-08, Vol.5 (3), p.031024, Article 031024

2015

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Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

PRX quantum, 2021-05, Vol.2 (2), p.020315, Article 020315

2021

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The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

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Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Communications physics, 2018-10, Vol.1 (1), Article 66

2018

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732

2013

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-state electronics, 2013-03, Vol.81, p.101-104

2013

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A silicon-based single-electron interferometer coupled to a fermionic sea

Physical review. B, 2018-01, Vol.97 (4), Article 045405

2018

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Process Variability-Technological Challenge and Design Issue for Nanoscale Devices

Micromachines (Basel), 2019-01, Vol.10 (1), p.6

2019

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Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Physical review. B, 2019-11, Vol.100 (20), p.1, Article 205425

2019

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-state electronics, 2013-03, Vol.81, p.58-62

2013

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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Less mobility degradation induced by transverse electric-field in junctionless transistors

Low-temperature electrical characterization of junctionless transistors

Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical Sensing

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Dopant-controlled single-electron pumping through a metallic island

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

A silicon-based single-electron interferometer coupled to a fermionic sea

Process Variability-Technological Challenge and Design Issue for Nanoscale Devices

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Separation of surface accumulation and bulk neutral channel in junctionless transistors

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