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A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2213-2222

2007

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Kayak drifter surface velocity observation for 2D hydraulic model validation

River research and applications, 2018-02, Vol.34 (2), p.124-134

2018

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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1388-1395

2009

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Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.159-166

2009

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3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor

IEEE transactions on nanotechnology, 2009-09, Vol.8 (5), p.603-610

2009

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The Impact of Random Dopant Aggregation in Source and Drain on the Performance of Ballistic DG Nano-MOSFETs: A NEGF Study

IEEE transactions on nanotechnology, 2007-07, Vol.6 (4), p.438-445

2007

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The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

Solid-state electronics, 2004-08, Vol.48 (8), p.1337-1346

2004

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A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Physica. E, Low-dimensional systems & nanostructures, 2007-03, Vol.37 (1), p.168-172

2007

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Complete Monte Carlo RF analysis of "real" short-channel compound FET's

IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1644-1652

1998

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Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Microelectronics and reliability, 2004-07, Vol.44 (7), p.1101-1107

2004

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A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.163-167

2003

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Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.475-479

2003

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Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility

Journal of non-crystalline solids, 2007-04, Vol.353 (5-7), p.630-634

2007

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.363-368

2003

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Beyond SiO 2 technology: Simulation of the impact of high- κ dielectrics on mobility

Journal of non-crystalline solids, 2007, Vol.353 (5), p.630-634

2007

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Interstellar polycyclic aromatic hydrocarbons - The infrared emission bands, the excitation/emission mechanism, and the astrophysical implications

The Astrophysical journal. Supplement series, 1989-12, Vol.71 (4), p.733-775

1989

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2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors

2008 International Conference on Simulation of Semiconductor Processes and Devices, 2008, p.337-340

Barker, J.R.

2008

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A reduced mechanism for methanol oxidation in supercritical water

Chemical engineering science, 1998-03, Vol.53 (5), p.857-867

1998

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Economics of ocean culture of giant clams, Tridacna gigas: internal rate of return analysis

Aquaculture, 1993-02, Vol.110 (1), p.13-26

1993

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On the physics and modeling of small semiconductor devices—I

Solid-state electronics, 1980-06, Vol.23 (6), p.519-530

1980

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High field collision rates in polar semiconductors

Solid-state electronics, 1978, Vol.21 (1), p.267-271

Barker, J.R.

1978

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Fungal infection in the cultured juvenile boring clam Tridacna crocea

Journal of invertebrate pathology, 1994-11, Vol.64 (3), p.273-275

1994

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Prospects for Molecular Electronics

Microelectronics international, 1987-03, Vol.4 (3), p.19-24

Barker, J.R

1987

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Monte carlo study of mobility in Si devices with -based oxides

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.995-999

2006

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Monte carlo study of mobility in Si devices with HfO 2 -based oxides

Materials science in semiconductor processing, 2006, Vol.9 (6), p.995-999

2006

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A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Kayak drifter surface velocity observation for 2D hydraulic model validation

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor

The Impact of Random Dopant Aggregation in Source and Drain on the Performance of Ballistic DG Nano-MOSFETs: A NEGF Study

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Complete Monte Carlo RF analysis of "real" short-channel compound FET's

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs

Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

Beyond SiO2 technology: Simulation of the impact of high-κ dielectrics on mobility

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

Beyond SiO 2 technology: Simulation of the impact of high- κ dielectrics on mobility

Interstellar polycyclic aromatic hydrocarbons - The infrared emission bands, the excitation/emission mechanism, and the astrophysical implications

2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors

A reduced mechanism for methanol oxidation in supercritical water

Economics of ocean culture of giant clams, Tridacna gigas: internal rate of return analysis

On the physics and modeling of small semiconductor devices—I

High field collision rates in polar semiconductors

Fungal infection in the cultured juvenile boring clam Tridacna crocea

Prospects for Molecular Electronics

Monte carlo study of mobility in Si devices with -based oxides

Monte carlo study of mobility in Si devices with HfO 2 -based oxides

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