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Propriétés structurales et optiques des composés quaternaires de CuIn1-xAlxS2 spray

Physica status solidi. A, Applied research, 1998-01, Vol.165 (1), p.141-150

1998

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Propriétés structurales et optiques des composés quaternaires de CuIn1—xAlxS2 spray

Physica status solidi. A, Applied research, 1998-01, Vol.165 (1), p.141-150

1998

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Étude par microscopie acoustique de couches minces de Ag2S déposées par spray

Journal de physique. III (Les Ulis), 1997, Vol.7 (9), p.1741-1753

1997

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Study of the elastic properties of sprayed SnO2 and SnS2 layers

Canadian journal of physics, 1999-09, Vol.77 (9), p.705-715

1999

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Structural and Acoustic Properties of ZnO Thin Films Prepared by Spray

Physica status solidi. A, Applied research, 1997-09, Vol.163 (1), p.73-80

1997

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Study of the elastic properties of sprayed SnO 2 and SnS 2 layers

Canadian journal of physics, 2000-02, Vol.77 (9), p.705-715

2000

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Determination de la position du niveau donneur du tellure dans GaSb

Solid state communications, 1970-06, Vol.8 (11), p.897-900

1970

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Signature V(z) en microscopie acoustique : influence de la non-uniformité de l'illumination du capteur

Le Journal de Physique IV, 1994-05, Vol.4 (C5), p.C5-C5-1216

1994

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Low-Energy Gap Semiconductor Mobilities in Presence of Spatial Fluctuations of Carrier Density

physica status solidi (b), 1976-07, Vol.76 (1), p.223-229

1976

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Structural and optical properties of Ag 2 S thin films prepared by spray pyrolysis

European physical journal. Applied physics, 1998-04, Vol.2 (1), p.13-16

1998

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Acoustic Properties of β-In 2 S 3 Thin Films Prepared by Spray

Japanese Journal of Applied Physics, 1999-01, Vol.38 (1R), p.26

1999

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Electron Mobility of GaxIn1−xSb at Room Temperature

Physica Status Solidi (b), 1976-08, Vol.76 (2), p.623-627

1976

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Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

Physica status solidi. A, Applied research, 1970-10, Vol.3 (2), p.421-429

1970

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Insight into boron-doped diamond Raman spectra characteristic features

Carbon (New York), 2017-05, Vol.115, p.279-284

2017

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Electron Mobility of Ga x In 1− x Sb at Room Temperature

physica status solidi (b), 1976-08, Vol.76 (2), p.623-627

1976

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Light hole effective masses of Gax In1-xSb

physica status solidi (b), 1975-03, Vol.68 (1), p.K81-K86

1975

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Light hole effective masses of Ga x In 1–x Sb

physica status solidi (b), 1975-03, Vol.68 (1)

1975

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Spatial fluctuations of carrier density in n type GaxIn1− xSb determined by SH-DH effect

Solid state communications, 1975-02, Vol.16 (3), p.289-292

1975

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Influence of the linear k term on the shape of the isoenergetic surfaces in p-type GaSb, deduced from galvanomagnetic measurements

The Journal of physics and chemistry of solids, 1973-12, Vol.34 (12), p.2221-2230

1973

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Scattering mechanisms in p-type GaSb in the temperature range 30–300°K

The Journal of physics and chemistry of solids, 1973-12, Vol.34 (12), p.2231-2234

1973

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Light Hole Effective Masses in GaxIn1-xSb

Physica Status Solidi (b), 1975-03, Vol.68 (1), p.K81-K86

1975

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Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Diamond and related materials, 2020-05, Vol.105, p.107768, Article 107768

2020

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Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

Applied physics letters, 2016-08, Vol.109 (6)

2016

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High quality, large surface area, homoepitaxial MPACVD diamond growth

Diamond and related materials, 2009-05, Vol.18 (5), p.683-697

2009

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Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

Nanotechnology, 2023-01, Vol.34 (3), p.35601

2023

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Propriétés structurales et optiques des composés quaternaires de CuIn1-xAlxS2 spray

Propriétés structurales et optiques des composés quaternaires de CuIn1—xAlxS2 spray

Étude par microscopie acoustique de couches minces de Ag2S déposées par spray

Study of the elastic properties of sprayed SnO2 and SnS2 layers

Structural and Acoustic Properties of ZnO Thin Films Prepared by Spray

Study of the elastic properties of sprayed SnO 2 and SnS 2 layers

Determination de la position du niveau donneur du tellure dans GaSb

Signature V(z) en microscopie acoustique : influence de la non-uniformité de l'illumination du capteur

Low-Energy Gap Semiconductor Mobilities in Presence of Spatial Fluctuations of Carrier Density

Structural and optical properties of Ag 2 S thin films prepared by spray pyrolysis

Acoustic Properties of β-In 2 S 3 Thin Films Prepared by Spray

Electron Mobility of GaxIn1−xSb at Room Temperature

Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

Insight into boron-doped diamond Raman spectra characteristic features

Electron Mobility of Ga x In 1− x Sb at Room Temperature

Light hole effective masses of Gax In1-xSb

Light hole effective masses of Ga x In 1–x Sb

Spatial fluctuations of carrier density in n type GaxIn1− xSb determined by SH-DH effect

Influence of the linear k term on the shape of the isoenergetic surfaces in p-type GaSb, deduced from galvanomagnetic measurements

Scattering mechanisms in p-type GaSb in the temperature range 30–300°K

Light Hole Effective Masses in GaxIn1-xSb

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

High quality, large surface area, homoepitaxial MPACVD diamond growth

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

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