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Effect of induced defects on conduction mechanisms of noble-gas-implanted ScN thin films

Journal of applied physics, 2023-08, Vol.134 (5)

2023

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Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

ACS applied energy materials, 2022-09, Vol.5 (9), p.11025-11033

2022

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Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

ACS applied energy materials, 2023-02, Vol.6 (4), p.2633-2633

2023

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Hydrogen induced growth and coalescence of helium-based defects

Physica status solidi. C, 2015-08, Vol.12 (8), p.1156-1159

2015

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GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon

Journal of applied crystallography, 2007-04, Vol.40 (s1), p.s350-s354

2007

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Helium implantation into 4H-SiC

Physica status solidi. A, Applications and materials science, 2009-08, Vol.206 (8), p.1916-1923

2009

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2462-2468

2016

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Damage accumulation in He implanted SiC at different temperatures

Physica status solidi. A, Applications and materials science, 2013-01, Vol.210 (1), p.218-221

2013

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Atomic scale structure of (001) hydrogen-induced platelets in germanium

Physical review letters, 2009-04, Vol.102 (15), p.155504-155504, Article 155504

2009

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Strain Measurements on Nitrogen Implanted 4H-SiC

Materials science forum, 2011-03, Vol.679-680, p.185-188, Article 185

2011

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Stress effect on the orientation and the arrangement of H-platelets

Physica status solidi. C, 2013-01, Vol.10 (1), p.44-47

2013

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2462-2468

2016

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Implantation damage in heavy gas implanted 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-05, Vol.374, p.71-75

2016

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Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c -axis

Journal of applied physics, 2008-08, Vol.104 (4), p.043526-043526-7

2008

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Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

Materials science forum, 2012, Vol.717-720, p.845-848

2012

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A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

Materials science forum, 2015-06, Vol.821-823, p.432-435

2015

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Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Materials science forum, 2012, Vol.717-720, p.485-488

2012

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Effects of Helium Implantation on the Mechanical Properties of 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.721-724

2010

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti sub(3)SiC sub(2) Phase

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2462-2468

2016

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Co-Germanide Schottky Contacts on Ge

Solid state phenomena, 2008-01, Vol.131-133, p.107-112

2008

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Extended Defects Created by Light Ion Implantation in Ge

ECS transactions, 2008-10, Vol.16 (6), p.163-175

2008

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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

Materials science forum, 2003-09, Vol.433-436, p.371-374

2003

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On the Effect of Lead on Irradiation Induced Defects in Silicon

Solid state phenomena, 2005-12, Vol.108-109, p.373-378

2005

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Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

Solid state phenomena, 2008-01, Vol.131-133, p.101-106

2008

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Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC

Materials science forum, 2012-01, Vol.711, p.184-187

2012

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Effect of induced defects on conduction mechanisms of noble-gas-implanted ScN thin films

Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN

Hydrogen induced growth and coalescence of helium-based defects

GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon

Helium implantation into 4H-SiC

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Damage accumulation in He implanted SiC at different temperatures

Atomic scale structure of (001) hydrogen-induced platelets in germanium

Strain Measurements on Nitrogen Implanted 4H-SiC

Stress effect on the orientation and the arrangement of H-platelets

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase

Implantation damage in heavy gas implanted 4H-SiC

Helium implanted gallium nitride evidence of gas-filled rod-shaped cavity formation along the c -axis

Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti sub(3)SiC sub(2) Phase

Co-Germanide Schottky Contacts on Ge

Extended Defects Created by Light Ion Implantation in Ge

Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

On the Effect of Lead on Irradiation Induced Defects in Silicon

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC

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