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The mechanisms of surface exfoliation in H and He implanted Si crystals

Scripta materialia, 2011-12, Vol.65 (12), p.1045-1048

2011

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Applied surface science, 2015-08, Vol.347, p.186-192

2015

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Swelling and stacking fault formation in helium implanted SiC

Journal of nuclear materials, 2011-06, Vol.413 (3), p.162-165

2011

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Swelling of SiC under helium implantation

Journal of applied physics, 2005-12, Vol.98 (11), p.113506-113506-6

2005

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Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature

Journal of nuclear materials, 2010-02, Vol.397 (1), p.132-134

2010

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Strain buildup in 4H-SiC implanted with noble gases at low dose

Materials today : proceedings, 2018, Vol.5 (6), p.14722-14731

2018

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Evolution of mechanical properties of SiC under helium implantation

Journal of nuclear materials, 2008-02, Vol.373 (1), p.142-149

2008

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Investigation of Die Attach for SiC Power Device for 300°C Applications

Materials science forum, 2013, Vol.740-742, p.1032-1035

2013

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Structure and mechanical properties of He-implanted SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-06, Vol.266 (12-13), p.2776-2779

2008

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Pinch off of nanopipes under electron irradiation in GaN

Applied physics letters, 2005-03, Vol.86 (13), p.131908-131908-3

2005

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Nanocavities induced by neon Plasma Based Ion Implantation in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.750-752

2007

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Damage induced in high energy helium-implanted 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-01, Vol.242 (1-2), p.399-401

2006

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Stability of defects created by high fluence helium implantation in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-12, Vol.226 (4), p.531-536

2004

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Influence of the pre-treatment anneal on Co–germanide Schottky contacts

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.300-304

2008

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Damage formation in high energy helium implanted 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-06, Vol.218, p.391-395

2004

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Extended-type defects created by high temperature helium implantation into silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-01, Vol.242 (1-2), p.565-567

2006

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Damage formation and recovery in temperature helium implanted 4H–SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.289-292

2003

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Helium implantation defects in SiC studied by thermal helium desorption spectrometry

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.223-228

2002

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An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.318-323

2002

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Formation of neon induced cavities in silicon by plasma based ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.193-195

2006

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Helium implantation in silicon: the effects of implantation temperature

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.222-227

2003

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Influence of Dislocations onI-V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC

physica status solidi (b), 2000-11, Vol.222 (1), p.159-167

2000

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Study of silver and copper diffusion in p-type Hg 0.3 Cd 0.7 Te and CdTe by capacitance measurements

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.254-257

2000

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Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.309-312

2002

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Radiation damage in He implanted silicon at high temperature using multi-energies

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-12, Vol.198 (1), p.83-89

2002

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The mechanisms of surface exfoliation in H and He implanted Si crystals

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Swelling and stacking fault formation in helium implanted SiC

Swelling of SiC under helium implantation

Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature

Strain buildup in 4H-SiC implanted with noble gases at low dose

Evolution of mechanical properties of SiC under helium implantation

Investigation of Die Attach for SiC Power Device for 300°C Applications

Structure and mechanical properties of He-implanted SiC

Pinch off of nanopipes under electron irradiation in GaN

Nanocavities induced by neon Plasma Based Ion Implantation in silicon

Damage induced in high energy helium-implanted 4H-SiC

Stability of defects created by high fluence helium implantation in silicon

Influence of the pre-treatment anneal on Co–germanide Schottky contacts

Damage formation in high energy helium implanted 4H-SiC

Extended-type defects created by high temperature helium implantation into silicon

Damage formation and recovery in temperature helium implanted 4H–SiC

Helium implantation defects in SiC studied by thermal helium desorption spectrometry

An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC

Formation of neon induced cavities in silicon by plasma based ion implantation

Helium implantation in silicon: the effects of implantation temperature

Influence of Dislocations onI-V Characteristics of Schottky Diodes Prepared on n-Type 6H-SiC

Study of silver and copper diffusion in p-type Hg 0.3 Cd 0.7 Te and CdTe by capacitance measurements

Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses

Radiation damage in He implanted silicon at high temperature using multi-energies

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