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Quantum confinement in Si and Ge nanostructures

Journal of applied physics, 2012-02, Vol.111 (3), p.034307-034307-9

2012

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Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods

Nanoscale, 2016-01, Vol.8 (2), p.995-1006

2016

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Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Applied physics letters, 2015-03, Vol.106 (9)

2015

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The role of Zn vacancies in UV sensing with ZnO nanorods

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices

Solar energy materials and solar cells, 2015-04, Vol.135, p.22-28

2015

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3C-SiC grown on Si by using a Si1-xGex buffer layer

Journal of crystal growth, 2019-08, Vol.519, p.1-6

2019

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Quantum confinement in nonadditive space with a spatially dependent effective mass for Si and Ge quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2014-09, Vol.63, p.14-20

2014

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Universal model for defect-related visible luminescence in ZnO nanorods

RSC advances, 2016-01, Vol.6 (77), p.73170-73175

2016

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The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Nanoscale, 2015-07, Vol.7 (26), p.11401-11408

2015

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Role of quantum confinement in luminescence efficiency of group IV nanostructures

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Use of W-boson longitudinal-transverse interferencein top quark spin-correlation functions

The European physical journal. C, Particles and fields, 2006-01, Vol.45 (1), p.121-138

2006

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Ion beam studies of Ge diffusion in Al 2 O 3

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.74-77

2012

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High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Materials science forum, 2019-07, Vol.963, p.346-349

2019

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Influence of interface potential on the effective mass in Ge nanostructures

Journal of applied physics, 2015-04, Vol.117 (15)

2015

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Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorodsElectronic supplementary information (ESI) available. See DOI: 10.1039/C5NR05122C

2015-12

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The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effectsSC contributed to sample processing, characterization, data analysis and interpretation, and drafted the manuscript. AMM performed STEM and EELS analysis, together with data interpretation. EGB contributed to data interpretation and conceived SPDEM model. RR contributed to sample characterization, data analysis and interpretation. RB and AA provided PECVD samples. MM synthesized sputter

2015-06

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(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

ECS transactions, 2013, Vol.53 (1), p.185-206

2013

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Universal model for defect-related visible luminescence in ZnO nanorodsElectronic supplementary information (ESI) available. See DOI: 10.1039/c6ra14453e

2016-08

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Electronic structure study of ion-implanted Si quantum dots in a SiO 2 matrix: Analysis of quantum confinement theories

Physical review. B, Condensed matter and materials physics, 2011-01, Vol.83 (3), Article 035112

2011

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Quantum confinement in Si and Ge nanostructures: Theory and experiment

Applied physics reviews, 2014-03, Vol.1 (1), p.11302

2014

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Quantum confinement in Si and Ge nanostructures

Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorods

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

The role of Zn vacancies in UV sensing with ZnO nanorods

Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices

3C-SiC grown on Si by using a Si1-xGex buffer layer

Quantum confinement in nonadditive space with a spatially dependent effective mass for Si and Ge quantum wells

Universal model for defect-related visible luminescence in ZnO nanorods

The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Role of quantum confinement in luminescence efficiency of group IV nanostructures

Use of W-boson longitudinal-transverse interferencein top quark spin-correlation functions

Ion beam studies of Ge diffusion in Al 2 O 3

High Resolution Investigation of Stacking Fault Density by HRXRD and STEM

Influence of interface potential on the effective mass in Ge nanostructures

Radiative mechanism and surface modification of four visible deep level defect states in ZnO nanorodsElectronic supplementary information (ESI) available. See DOI: 10.1039/C5NR05122C

(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

Universal model for defect-related visible luminescence in ZnO nanorodsElectronic supplementary information (ESI) available. See DOI: 10.1039/c6ra14453e

Electronic structure study of ion-implanted Si quantum dots in a SiO 2 matrix: Analysis of quantum confinement theories

Quantum confinement in Si and Ge nanostructures: Theory and experiment

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