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Low-threshold and high-temperature operation of InGaAlAs-InP lasers

IEEE photonics technology letters, 1997-01, Vol.9 (1), p.17-18

1997

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Signal-induced noise in fiber-optic links using directly modulated Fabry-Perot and distributed-feedback laser diodes

Journal of lightwave technology, 1993-07, Vol.11 (7), p.1216-1225

1993

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Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers

Applied physics letters, 1989-09, Vol.55 (12), p.1173-1175

1989

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Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Applied physics letters, 1983-07, Vol.43 (1), p.1-3

1983

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Correlation of resistance and interfacial reaction of contacts to n-type InP

Journal of materials research, 2002-11, Vol.17 (11), p.2929-2934

2002

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Very high power InGaAsP/InP distributed feedback lasers at 1550 nm wavelength

Applied physics letters, 1998-03, Vol.72 (11), p.1269-1271, Article 1269

1998

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High-speed digital modulation of ultralow threshold (<1mA) GaAs single quantum well lasers without bias

Applied physics letters, 1987-07, Vol.51 (2), p.69-71

1987

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980-nm master oscillator power amplifiers with nonabsorbing mirrors

IEEE photonics technology letters, 1999-09, Vol.11 (9), p.1099-1101

1999

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11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature

Applied physics letters, 1984-08, Vol.45 (4), p.316-318

1984

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A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser

Applied physics letters, 1980-07, Vol.37 (2), p.211-213

1980

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High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

Applied physics letters, 1983-08, Vol.43 (3), p.261-262

1983

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A high-speed InGaAsP/InP DFB laser with an air-bridge contact configuration

IEEE photonics technology letters, 1993-01, Vol.5 (1), p.1-3

1993

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Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Applied physics letters, 1982-04, Vol.40 (8), p.643-645

1982

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Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings

Applied physics letters, 1987-06, Vol.50 (25), p.1773-1775

1987

Volltextzugriff (PDF)

High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 mu m wavelength

Electronics letters, 1996-05, Vol.32 (10/898/1996)

1996

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Electric field dependence of the dielectric constant of PZT ferroelectric ceramics

Journal of applied physics, 1974-01, Vol.45 (6), p.2398-2405

1974

Volltextzugriff (PDF)

Longitudinal electrooptic effects in slim-loop and linear PLZT ceramics

Applied Optics, 1980-05, Vol.19 (10), p.1609

1980

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Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

Applied physics letters, 1983-08, Vol.43 (4), p.329-331

1983

Volltextzugriff (PDF)

Very large bandwidth strained MQW DFB laser at 1.3 μm

IEEE photonics technology letters, 1995-05, Vol.7 (5), p.458-460

1995

Volltextzugriff (PDF)

High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression

IEEE journal of quantum electronics, 1989-04, Vol.25 (4), p.696-704

1989

Volltextzugriff (PDF)

Whispering gallery lasers on semi-insulating GaAs substrates

Applied physics letters, 1980-04, Vol.36 (8), p.629-631

1980

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High-speed operation of single-quantum-well lasers with large gain compression

IEEE photonics technology letters, 1992-02, Vol.4 (2), p.118-120

1992

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Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

IEEE journal of quantum electronics, 1982-10, Vol.18 (10), p.1653-1662

1982

Volltextzugriff (PDF)

High speed complex-coupled DFB laser at 1.3μm

Electronics letters, 1994-06, Vol.30 (13), p.1055-1057

1994

Volltextzugriff (PDF)

High-power GaAlAs window lasers

Electronics letters, 1986, Vol.22 (5), p.279-280

1986

Volltextzugriff (PDF)

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Low-threshold and high-temperature operation of InGaAlAs-InP lasers

Signal-induced noise in fiber-optic links using directly modulated Fabry-Perot and distributed-feedback laser diodes

Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Correlation of resistance and interfacial reaction of contacts to n-type InP

Very high power InGaAsP/InP distributed feedback lasers at 1550 nm wavelength

High-speed digital modulation of ultralow threshold (<1mA) GaAs single quantum well lasers without bias

980-nm master oscillator power amplifiers with nonabsorbing mirrors

11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature

A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed InGaAsP/InP DFB laser with an air-bridge contact configuration

Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings

High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 mu m wavelength

Electric field dependence of the dielectric constant of PZT ferroelectric ceramics

Longitudinal electrooptic effects in slim-loop and linear PLZT ceramics

Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

Very large bandwidth strained MQW DFB laser at 1.3 μm

High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression

Whispering gallery lasers on semi-insulating GaAs substrates

High-speed operation of single-quantum-well lasers with large gain compression

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

High speed complex-coupled DFB laser at 1.3μm

High-power GaAlAs window lasers

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