UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 111

Sortiert nach

Brief Review of Surface Passivation on III-V Semiconductor

Crystals (Basel), 2018-05, Vol.8 (5), p.226

2018

Link zum Volltext

Verfügbarkeit prüfen

Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition

Journal of electronic materials, 2019-01, Vol.48 (1), p.679-683

2019

Link zum Volltext

Verfügbarkeit prüfen

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Scientific reports, 2022-03, Vol.12 (1), p.5010-5010, Article 5010

2022

Link zum Volltext

Verfügbarkeit prüfen

Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

Materials research bulletin, 2018-06, Vol.102, p.86-91

2018

Link zum Volltext

Verfügbarkeit prüfen

Passivation Effect on ZnO Films by SF6 Plasma Treatment

Crystals (Basel), 2019-05, Vol.9 (5), p.236

2019

Link zum Volltext

Verfügbarkeit prüfen

Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

IEEE photonics journal, 2017-06, Vol.9 (3), p.1-8

2017

Link zum Volltext

Verfügbarkeit prüfen

All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO4 Laser

IEEE access, 2021, Vol.9, p.165989-165995

2021

Link zum Volltext

Verfügbarkeit prüfen

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

IEEE access, 2021, Vol.9, p.16608-16614

2021

Link zum Volltext

Verfügbarkeit prüfen

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Crystals (Basel), 2018-09, Vol.8 (9), p.339

2018

Link zum Volltext

Verfügbarkeit prüfen

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

Japanese Journal of Applied Physics, 2018-03, Vol.57 (3), p.30303

2018

Link zum Volltext

Verfügbarkeit prüfen

InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Solid-state electronics, 2013-11, Vol.89, p.81-84

2013

Link zum Volltext

Verfügbarkeit prüfen

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Solid-state electronics, 2013-01, Vol.79, p.281-284

2013

Link zum Volltext

Verfügbarkeit prüfen

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

IEEE journal of the Electron Devices Society, 2017-03, Vol.5 (2), p.122-127

2017

Link zum Volltext

Verfügbarkeit prüfen

Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Journal of lightwave technology, 2011-12, Vol.29 (24), p.3689-3692

2011

Link zum Volltext
IEEE_Xplore

Study on extended depth of field for a planar flow cytometric microimaging system

Applied optics (2004), 2018-10, Vol.57 (28), p.8424-8430

2018

Link zum Volltext

Verfügbarkeit prüfen

The hopping variable range conduction in amorphous InAs thin films

Current applied physics, 2018-12, p.1492-1495

2018

Link zum Volltext

Verfügbarkeit prüfen

High-performance 1.06- μ m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Semiconductor science and technology, 2019-05, Vol.34 (5), p.55013

2019

Link zum Volltext

Verfügbarkeit prüfen

Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

Optik (Stuttgart), 2019-02, Vol.178, p.210-215

2019

Link zum Volltext

Verfügbarkeit prüfen

GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

Materials science in semiconductor processing, 2022-10, Vol.149, p.106877, Article 106877

2022

Link zum Volltext

Verfügbarkeit prüfen

High-efficiency and color-stable warm white organic light-emitting diodes utilizing energy transfer from interface exciplex

Organic electronics, 2018-11, Vol.62, p.524-529

2018

Link zum Volltext

Verfügbarkeit prüfen

The photoluminescence characteristics of GaAs surface by plasma treatment

Materials science in semiconductor processing, 2021-11, Vol.134, p.106050, Article 106050

2021

Link zum Volltext

Verfügbarkeit prüfen

Single emitter high power semiconductor laser module using vacuum sintering method

Optik (Stuttgart), 2020-04, Vol.207, p.164370, Article 164370

2020

Link zum Volltext

Verfügbarkeit prüfen

Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1248-1249

2004

Link zum Volltext
IEEE_Xplore

Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]

Optics and laser technology, 2024-10, Vol.177, p.111080, Article 111080

2024

Link zum Volltext

Verfügbarkeit prüfen

High-performance 1.06- m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Semiconductor science and technology, 2019-04, Vol.34 (5)

2019

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 111

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(75)
Mit Volltextzugriff
(102)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(67)
Technology
(47)
Physical Sciences
(42)
Physics
(32)
Engineering
(31)
Optics
(25)
Engineering, Electrical & Electronic
(24)
Materials Science
(24)
Physics, Applied
(23)
Materials Science, Multidisciplinary
(21)
Lasers
(17)
Semiconductor Lasers
(16)
Exact Sciences And Technology
(12)
Gallium Arsenide
(12)
Passivation
(11)
Science & Technology - Other Topics
(11)
Crystallography
(10)
Diode Lasers
(10)
High Power
(10)
Nanoscience & Nanotechnology
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Brief Review of Surface Passivation on III-V Semiconductor

Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide

Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals

Passivation Effect on ZnO Films by SF6 Plasma Treatment

Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror

All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO4 Laser

Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier

Study on extended depth of field for a planar flow cytometric microimaging system

The hopping variable range conduction in amorphous InAs thin films

High-performance 1.06- μ m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system

GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

High-efficiency and color-stable warm white organic light-emitting diodes utilizing energy transfer from interface exciplex

The photoluminescence characteristics of GaAs surface by plasma treatment

Single emitter high power semiconductor laser module using vacuum sintering method

Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]

High-performance 1.06- m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

Suchergebnisse filtern