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Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets

Nature communications, 2013-02, Vol.4 (1), p.1444, Article 1444

2013

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MoS2 nanoflower-decorated reduced graphene oxide paper for high-performance hydrogen evolution reaction

Nanoscale, 2014-06, Vol.6 (11), p.5624-5629

2014

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Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Applied physics letters, 2021-11, Vol.119 (19)

2021

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Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

Applied physics letters, 2016-12, Vol.109 (24)

2016

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GeSn-on-insulator substrate formed by direct wafer bonding

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Journal of semiconductors, 2021-02, Vol.42 (2), p.23106-102

2021

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High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Photonics research (Washington, DC), 2017-12, Vol.5 (6), p.702

2017

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Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Applied physics express, 2016-08, Vol.9 (8), p.86501

2016

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Interactive Geological Data Visualization in an Immersive Environment

ISPRS international journal of geo-information, 2022-03, Vol.11 (3), p.176

2022

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Integration of III-V materials and Si-CMOS through double layer transfer process

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.30209-1-030209-5

2015

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Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

AIP advances, 2016-02, Vol.6 (2), p.025028-025028-7

2016

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Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

APL materials, 2015-01, Vol.3 (1), p.016102-016102-7

2015

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Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.571-578

2018

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The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate

Journal of crystal growth, 2015-07, Vol.421, p.58-65

2015

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Strain relaxation of germanium-tin (GeSn) fins

AIP advances, 2018-02, Vol.8 (2), p.025111-025111-7

2018

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(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

ECS transactions, 2016-08, Vol.75 (12), p.31-37

2016

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Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI)

Optics express, 2023-05, Vol.31 (11), p.17921-17929

2023

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A fast and deterministic algorithm for Knapsack-constrained monotone DR-submodular maximization over an integer lattice

Journal of global optimization, 2023, Vol.85 (1), p.15-38

2023

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Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Journal of applied physics, 2018-01, Vol.123 (1)

2018

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Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication

Optics letters, 2020-12, Vol.45 (24), p.6683-6686

2020

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Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Journal of materials research, 2017-11, Vol.32 (21), p.4025-4040

2017

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116665, Article 116665

2023

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Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95036

2020

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Thermal stability of germanium-tin (GeSn) fins

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets

MoS2 nanoflower-decorated reduced graphene oxide paper for high-performance hydrogen evolution reaction

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

GeSn-on-insulator substrate formed by direct wafer bonding

Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Interactive Geological Data Visualization in an Immersive Environment

Integration of III-V materials and Si-CMOS through double layer transfer process

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate

Strain relaxation of germanium-tin (GeSn) fins

(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI)

A fast and deterministic algorithm for Knapsack-constrained monotone DR-submodular maximization over an integer lattice

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication

Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

Thermal stability of germanium-tin (GeSn) fins

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