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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2261-2271

2014

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Hybrid islanding detection technique for single-phase grid-connected photovoltaic multi-inverter systems

IET renewable power generation, 2020-12, Vol.14 (18), p.3864-3880

2020

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Simulation and Experimental Results for Energy Production Using Hybrid Photovoltaic Thermal Technology

Energies (Basel), 2024-03, Vol.17 (6), p.1422

2024

Volltextzugriff (PDF)

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1847-1856

2008

Volltextzugriff (PDF)

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE transactions on industrial electronics (1982), 2015-05, Vol.62 (5), p.3182-3191

2015

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Latest Concept to Generate Temperature Compensated Voltage Reference

2019 International Semiconductor Conference (CAS), 2019, p.129-132

2019

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SiC Schottky Diodes for Harsh Environment Space Applications

IEEE transactions on industrial electronics (1982), 2011-07, Vol.58 (7), p.2582-2590

2011

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Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration

Materials science forum, 2018-06, Vol.924, p.975-979

2018

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Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs

IEEE journal of emerging and selected topics in power electronics, 2021-08, Vol.9 (4), p.4320-4329

2021

Volltextzugriff (PDF)

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs

Materials science forum, 2019-07, Vol.963, p.768-772

2019

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Impact of layout on the surge current robustness of 1.2 KV SiC diodes

2017 International Semiconductor Conference (CAS), 2017, p.147-150

2017

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Review, analysis, and performance evaluation of the most common four active methods for islanding detection in grid-connected photovoltaic systems

Electric power systems research, 2023-01, Vol.214, p.108909, Article 108909

2023

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Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor

2015 International Semiconductor Conference (CAS), 2015, p.171-174

2015

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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications: SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS

IEEE transactions on power electronics, 2014, Vol.29 (5), p.2261-2271

2014

Volltextzugriff (PDF)

Passive anti-Islanding protection for Three-Phase Grid-Connected photovoltaic power systems

International journal of electrical power & energy systems, 2023-06, Vol.148, p.108946, Article 108946

2023

Volltextzugriff (PDF)

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Materials science forum, 2012, Vol.711, p.104-108

2012

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Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Materials Science Forum, 2016-05, Vol.858, p.1053-1056

2016

Volltextzugriff (PDF)

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

Materials science forum, 2013-01, Vol.740-742, p.1048-1051

2013

Volltextzugriff (PDF)

Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

Materials science forum, 2013-01, Vol.740-742, p.873-876

2013

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High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

Materials science forum, 2014-02, Vol.778-780, p.1130-1134

2014

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Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

Materials science forum, 2014-02, Vol.778-780, p.891-894

2014

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High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs

2013 Proceedings of the ESSCIRC (ESSCIRC), 2013, p.427-430

2013

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Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Materials science forum, 2011, Vol.679-680, p.754-757

2011

Volltextzugriff (PDF)

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology

IEEE transactions on electron devices, 2008, Vol.55 (8), p.1847-1856

2008

Volltextzugriff (PDF)

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

Materials science forum, 2010-01, Vol.645-648, p.1131-1134

2010

Volltextzugriff (PDF)

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Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Hybrid islanding detection technique for single-phase grid-connected photovoltaic multi-inverter systems

Simulation and Experimental Results for Energy Production Using Hybrid Photovoltaic Thermal Technology

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

SiC Integrated Circuit Control Electronics for High-Temperature Operation

Latest Concept to Generate Temperature Compensated Voltage Reference

SiC Schottky Diodes for Harsh Environment Space Applications

Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration

Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs

Impact of layout on the surge current robustness of 1.2 KV SiC diodes

Review, analysis, and performance evaluation of the most common four active methods for islanding detection in grid-connected photovoltaic systems

Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications: SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS

Passive anti-Islanding protection for Three-Phase Grid-Connected photovoltaic power systems

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Studies on Floating Contact Press-Pack Diodes Surge Current Capability

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs

Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications

Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology

Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material

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