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Heating of Electrons in Pure Ge in a Quantum Magnetic Field Upon the Thermal Excitation of Charge Carriers

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.275-277

2020

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Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.290-292

Bannaya, V. F.

2017

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Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.9-13

2019

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Electrical Breakdown in Pure n- and p-Si

Semiconductors (Woodbury, N.Y.), 2018-03, Vol.52 (3), p.273-277

2018

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Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation

Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9), p.1154-1159

Bannaya, V. F.

2015

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Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation

Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9), p.1160-1162

Bannaya, V. F.

2015

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Specific features of Hall measurements in doped semiconductors

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.760-762

Bannaya, V. F.

2015

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Methods for estimating the compensating-impurity concentration in Hg-doped Ge

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1408-1410

Bannaya, V. F.

2014

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Characteristics of low-temperature conduction in mercury-doped germanium

Semiconductors (Woodbury, N.Y.), 1993, Vol.27 (10), p.918-920

1993

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Heating of Electrons in Pure Ge in a Quantum Magnetic Field Upon the Thermal Excitation of Charge Carriers

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength

Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium

Electrical Breakdown in Pure n- and p-Si

Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation

Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation

Specific features of Hall measurements in doped semiconductors

Methods for estimating the compensating-impurity concentration in Hg-doped Ge

Characteristics of low-temperature conduction in mercury-doped germanium

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