UB Paderborn / Katalog / Suche / in CDI

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2008-01, Vol.366 (1863), p.251-265

2008

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Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

IEEE electron device letters, 2004-07, Vol.25 (7), p.456-458

2004

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Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Solid-state electronics, 2005-02, Vol.49 (2), p.279-282

2005

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Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry

Journal of crystal growth, 2003-02, Vol.248, p.216-221

2003

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Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Journal of lightwave technology, 2003-01, Vol.21 (1), p.211-217

2003

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IEEE_Xplore

Surface leakage currents in SiNx passivated AlGaN/GaN HFETs

IEEE electron device letters, 2006, Vol.27 (1), p.1-3

2006

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A lateral time-of-flight system for charge transport studies

Diamond and related materials, 2009-09, Vol.18 (9), p.1163-1166

2009

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Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry

Journal of crystal growth, 2002-11, Vol.245 (3), p.198-206

2002

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Metal Contacts to Boron-Doped Diamond

Materials science forum, 2009-01, Vol.615-617, p.995-998

2009

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Experimental gallium nitride microwave Doherty amplifier

Electronics letters, 2005, Vol.41 (23), p.1284-1285

2005

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In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs

Journal of crystal growth, 2001-09, Vol.230 (3), p.361-367

2001

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Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

IEEE electron device letters, 2006-01, Vol.27 (1), p.1-3

2006

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Integrated Raman - IR Thermography on AlGaN/GaN Transistors

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1339-1342

2006

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IEEE_Xplore

MMIC power amplifier based on AlGaN∕GaN HEMTs at 10 GHz

Electronics letters, 2004, Vol.40 (9), p.564

2004

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High Conductivity δ-Doped Single Crystal Diamond Schottky m-i-p+ Diodes

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.249-252

2008

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IEEE_Xplore

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.503-509

2005

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Characterization of CVD Diamond for Thermal Management Applications

International Symposium on Microelectronics, 2013-01, Vol.2013 (1), p.511-515

2013

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Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.3, p.1657-1659 Vol.3

2004

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Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

Journal of crystal growth, 2000-02, Vol.209 (2), p.486-491

2000

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Punch-through in short-channel AlGaN/GaN HFETs

Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Diamond MISFET based on boron delta-doped channel

High temperature performance of AlGaN/GaN HEMTs on Si substrates

Unlocking diamond's potential as an electronic material

Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs

Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry

Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run

Surface leakage currents in SiNx passivated AlGaN/GaN HFETs

A lateral time-of-flight system for charge transport studies

Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry

Metal Contacts to Boron-Doped Diamond

Experimental gallium nitride microwave Doherty amplifier

In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

Integrated Raman - IR Thermography on AlGaN/GaN Transistors

MMIC power amplifier based on AlGaN∕GaN HEMTs at 10 GHz

High Conductivity δ-Doped Single Crystal Diamond Schottky m-i-p+ Diodes

Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements

Characterization of CVD Diamond for Thermal Management Applications

Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

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