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Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

Semiconductor science and technology, 2013-01, Vol.28 (1), p.15026

2013

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Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field

Semiconductor science and technology, 2020-08, Vol.35 (8), p.85035

2020

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Improved device performance based on crosslinking of poly (3-hexylthiophene)

Synthetic metals, 2010-10, Vol.160 (19), p.2061-2064

2010

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Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Chinese physics letters, 2010-04, Vol.27 (4), p.234-237

2010

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Carrier multiplication in nanoparticle PbSe/single crystal Si heterojunctions

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095020

2008

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Engineering Interface Composition for Passivation of HgCdTe Photodiodes

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2727-2734

2006

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The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

Semiconductor science and technology, 2005-08, Vol.20 (8), p.783-787

2005

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Deposition of nanosized grains of ferroelectric lead zirconate titanate on thin films using dense plasma focus

Journal of physics. D, Applied physics, 2004-04, Vol.37 (7), p.1091-1094

2004

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Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP

Semiconductor science and technology, 2004-06, Vol.19 (6), p.680-684

2004

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Effect of pH on electrical and optical properties of sol–gel derived microcrystalline Ba0.5Sr0.5TiO3 thin films

Applied surface science, 2004-09, Vol.236 (1-4), p.306-312

2004

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Effect of pre-sintering temperature on the structural and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited by sol-gel technique

Ceramics international, 2004, Vol.30 (8), p.2283-2287

2004

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Defect study of MOVPE-grown InGaP layers on GaAs

Journal of crystal growth, 2004-12, Vol.272 (1), p.627-632

2004

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Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

Journal of crystal growth, 2003-02, Vol.248, p.364-368

2003

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Dehydrodivanillin: Multi-dimensional NMR Spectral Studies, Surface Morphology and Electrical Characteristics of Thin Films

Bulletin of the Korean Chemical Society, 2009, 30(12), , pp.2895-2898

2009

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The safety of patient‐controlled sedation

Anaesthesia, 1997-12, Vol.52 (12), p.1144-1150

1997

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Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics

IEEE transactions on electron devices, 2000-02, Vol.47 (2), p.282-287

2000

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Experimental evidence of surface conduction contributing to transconductance dispersion in GaAs MESFETs

IEEE transactions on electron devices, 1997-07, Vol.44 (7), p.1060-1065

1997

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Biaryl crosslinkers. I. Crosslinking of a bisazidobiaryl with poly(3-hexylthiophene)

Canadian journal of chemistry, 2011-05, Vol.89 (5), p.549-554

2011

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Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Thin solid films, 2016-08, Vol.612, p.147-152

2016

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Conductance deep-level transient spectroscopic study of anomalous hole trap in GaAs MESFETs

Semiconductor science and technology, 1998-10, Vol.13 (10), p.1094-1099

1998

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Degradation process in organic thin film devices fabricated using P3HT

Pramāṇa, 2007-03, Vol.68 (3), p.489-498

2007

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Dependence of dc and ac conduction on the pre-sintering temperature in sol–gel derived Ba0.5Sr0.5TiO3 thin films

Materials chemistry and physics, 2006-12, Vol.100 (2-3), p.404-410

2006

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Effect of field dependent trap occupancy on organic thin film transistor characteristics

Journal of applied physics, 2003-10, Vol.94 (8), p.5302-5306

2003

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Process-induced defects in manufacture of GaAs monolithic microwave integrated circuits

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.268-271

1994

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The Proposed IEEE 896 Futurebus - A Solution to the Bus Driving Problem

IEEE MICRO, 1984-01, Vol.4 (4), p.23-27

Balakrishnan, R. V.

1984

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Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field

Improved device performance based on crosslinking of poly (3-hexylthiophene)

Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths

Carrier multiplication in nanoparticle PbSe/single crystal Si heterojunctions

Engineering Interface Composition for Passivation of HgCdTe Photodiodes

The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

Deposition of nanosized grains of ferroelectric lead zirconate titanate on thin films using dense plasma focus

Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP

Effect of pH on electrical and optical properties of sol–gel derived microcrystalline Ba0.5Sr0.5TiO3 thin films

Effect of pre-sintering temperature on the structural and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited by sol-gel technique

Defect study of MOVPE-grown InGaP layers on GaAs

Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

Dehydrodivanillin: Multi-dimensional NMR Spectral Studies, Surface Morphology and Electrical Characteristics of Thin Films

The safety of patient‐controlled sedation

Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics

Experimental evidence of surface conduction contributing to transconductance dispersion in GaAs MESFETs

Biaryl crosslinkers. I. Crosslinking of a bisazidobiaryl with poly(3-hexylthiophene)

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Conductance deep-level transient spectroscopic study of anomalous hole trap in GaAs MESFETs

Degradation process in organic thin film devices fabricated using P3HT

Dependence of dc and ac conduction on the pre-sintering temperature in sol–gel derived Ba0.5Sr0.5TiO3 thin films

Effect of field dependent trap occupancy on organic thin film transistor characteristics

Process-induced defects in manufacture of GaAs monolithic microwave integrated circuits

The Proposed IEEE 896 Futurebus - A Solution to the Bus Driving Problem

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