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Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing

Scientific reports, 2022-09, Vol.12 (1), p.16170-16170, Article 16170

2022

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Terahertz time-domain-spectroscopy system based on femtosecond Yb:fiber laser and GaBiAs photoconducting components

Applied physics letters, 2010-07, Vol.97 (3), p.031111-031111-3

2010

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Detection of tab wire soldering defects on silicon solar cells using terahertz time-domain spectroscopy

Electronics letters, 2012-07, Vol.48 (15), p.932-934

2012

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Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

Electronics letters, 2006-07, Vol.42 (14), p.825-827

2006

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Subsecond-response SAW humidity sensor with porphyrin nanostructure deposited on bare and metallised piezoelectric substrate

Electronics letters, 2007-09, Vol.43 (19), p.1055-1057

2007

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Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS2 nanolayers on crystalline silicon

Nanotechnology, 2020-10, Vol.31 (42), p.425603-425603

2020

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Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS 2 nanolayers on crystalline silicon

Nanotechnology, 2020-10, Vol.31 (42), p.425603

2020

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Terahertz radiation emitters and detectors

Optical materials, 2008-01, Vol.30 (5), p.786-788

2008

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Detection of terahertz∕sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Electronics letters, 2004, Vol.40 (10), p.631

2004

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Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012077

2009

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Terahertz techniques for solar cell imaging

AIP Conference Proceedings, 2013, Vol.1566 (1), p.376

2013

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Photoemission study of LT-GaAs

European Materials Research Society Fall Meeting, 2003,Warsaw, Poland,2003-09-15 - 2003-09-19, 2004-11, Vol.382 (1-2), p.234-238

2004

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Detection of tab wire soldering defects on silicon solar cells using terahertz time-domain spectroscopy

Electronics letters, 2012-07, Vol.48 (15), p.1-1

2012

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Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Acta physica Polonica, A, 2005-01, Vol.107 (1), p.128-131

2005

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Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes

Acta physica Polonica, A, 2005-01, Vol.107 (1), p.184-187

2005

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Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells

Applied physics letters, 2008-02, Vol.92 (5)

2008

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Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

Acta physica Polonica, A, 2013-11, Vol.124 (5), p.846-848

2013

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Subsecond-response SAW humidity sensor with porphyrin nanostructure deposited on bare and metallised piezoelectric substrate

Electronics letters, 2007-09, Vol.43 (19), p.1-1

2007

Volltextzugriff (PDF)

Impurity bound-to-unbound terahertz sensors based on berylliumand silicon δ -doped Ga As ∕ Al As multiple quantum wells

Applied physics letters, 2008-02, Vol.92 (5), p.053503-053503-3

2008

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Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Acta physica Polonica, A, 2008-10, Vol.114 (4), p.779-790

2008

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Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga 1-x Mn x As

Acta physica Polonica, A, 2007-08, Vol.112 (2), p.311-314

2007

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Hall Mobility Field Effect in Two Layer Conductivity Samples

Acta physica Polonica, A, 2008-10, Vol.114 (4), p.903-912

2008

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Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

Acta physica Polonica, A, 2009-12, Vol.116 (6), p.1076-1080

2009

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An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well

Semiconductors (Woodbury, N.Y.), 2007-12, Vol.41 (12), p.1439-1444

2007

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Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

Electronics letters, 2006-07, Vol.42 (14), p.1-1

2006

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Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing

Terahertz time-domain-spectroscopy system based on femtosecond Yb:fiber laser and GaBiAs photoconducting components

Detection of tab wire soldering defects on silicon solar cells using terahertz time-domain spectroscopy

Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

Subsecond-response SAW humidity sensor with porphyrin nanostructure deposited on bare and metallised piezoelectric substrate

Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS2 nanolayers on crystalline silicon

Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS 2 nanolayers on crystalline silicon

Terahertz radiation emitters and detectors

Detection of terahertz∕sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging

Terahertz techniques for solar cell imaging

Photoemission study of LT-GaAs

Detection of tab wire soldering defects on silicon solar cells using terahertz time-domain spectroscopy

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes

Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells

Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers

Subsecond-response SAW humidity sensor with porphyrin nanostructure deposited on bare and metallised piezoelectric substrate

Impurity bound-to-unbound terahertz sensors based on berylliumand silicon δ -doped Ga As ∕ Al As multiple quantum wells

Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga 1-x Mn x As

Hall Mobility Field Effect in Two Layer Conductivity Samples

Investigation and Generation of Vacancies in Alpha Quartz by Soft X-Rays

An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well

Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature

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