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Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots

Physical review letters, 2002-02, Vol.88 (8), p.087401-087401, Article 087401

2002

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Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots

Physical review letters, 2000-01, Vol.84 (2), p.334-337

2000

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Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

Journal of applied physics, 2001-04, Vol.89 (8), p.4558-4563

2001

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Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots

Physical review. B, Condensed matter, 2001, Vol.63 (24), Article 241303

2001

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Thin multiplication region InAlAs homojunction avalanche photodiodes

Applied physics letters, 1998-08, Vol.73 (6), p.783-784

1998

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Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

Applied physics letters, 1997-05, Vol.70 (18), p.2356-2358

1997

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Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots

Physica status solidi. B. Basic research, 2001-04, Vol.224 (3), p.697-702

2001

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Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

Applied physics letters, 2000-02, Vol.76 (6), p.700-702

2000

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Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm

IEEE photonics technology letters, 1998-07, Vol.10 (7), p.1009-1011

1998

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Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

Journal of applied physics, 1997-12, Vol.82 (12), p.6362-6364

1997

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High-speed and low-noise avalanche photodiode operating at 1.06 mu m

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3)

2000

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1200-1204

2002

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InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region

Infrared physics & technology, 2001-06, Vol.42 (3-5), p.479-484

2001

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Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states

Physical review. B, Condensed matter, 1999-10, Vol.60 (15), p.11026-11029

1999

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Nonuniform Composition Profile in In 0.5 Ga 0.5 As Alloy Quantum Dots

Physical review letters, 2000-01, Vol.84 (2), p.334-337

2000

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High-speed and low-noise avalanche photodiode operating at 1.06 [micro]m

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.422

2000

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High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.422-425

2000

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High-speed and low-noise avalanche photodiode operating at 1.06 mum

IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3), p.422-425

2000

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Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 [micro sign]m

Electronics letters, 1998, Vol.34 (7), p.694

1998

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Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 mum

IEEE photonics technology letters, 1998-07, Vol.10 (7), p.1009-1011

1998

Volltextzugriff (PDF)

InAs/Al xGa 1− xAs quantum dot infrared photodetectors with undoped active region

Infrared physics & technology, 2001, Vol.42 (3), p.479-484

2001

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Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1999-05, Vol.17 (3), p.1124-1126

1999

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High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al 0.2 Ga 0.8 As Blocking Layers

MRS proceedings, 2001, Vol.692, Article H9.17.1

2001

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High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

MRS proceedings, 2001, Vol.692

2001

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Nano-Photoluminescence Studies of Self-Assembled Quantum Dots

MRS proceedings, 1999, Vol.583, Article 105

1999

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Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots

Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots

Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

Carrier relaxation and quantum decoherence of excited states in self-assembled quantum dots

Thin multiplication region InAlAs homojunction avalanche photodiodes

Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots

Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm

Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy

High-speed and low-noise avalanche photodiode operating at 1.06 mu m

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region

Quantum dots at the nanometer scale: Interdot carrier shuffling and multiparticle states

Nonuniform Composition Profile in In 0.5 Ga 0.5 As Alloy Quantum Dots

High-speed and low-noise avalanche photodiode operating at 1.06 [micro]m

High-speed and low-noise avalanche photodiode operating at 1.06 /spl mu/m

High-speed and low-noise avalanche photodiode operating at 1.06 mum

Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 [micro sign]m

Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 mum

InAs/Al xGa 1− xAs quantum dot infrared photodetectors with undoped active region

Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al 0.2 Ga 0.8 As Blocking Layers

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

Nano-Photoluminescence Studies of Self-Assembled Quantum Dots

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