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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Applied physics letters, 2024-08, Vol.125 (9)

2024

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Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE electron device letters, 2017-12, Vol.38 (12), p.1696-1699

2017

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Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Applied physics letters, 2022-06, Vol.120 (26)

2022

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Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1721-1727

2018

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Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Scientific reports, 2023-09, Vol.13 (1), p.15931-15931, Article 15931

2023

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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials, 2021-04, Vol.14 (9), p.2316

2021

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.79-86

2018

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Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Materials, 2020-10, Vol.13 (21), p.4740

2020

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Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Micromachines (Basel), 2021-02, Vol.12 (2), p.199

2021

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Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n - n Diodes: The Road to Reliable Vertical MOSFETs

Micromachines (Basel), 2021-04, Vol.12 (4), p.445

2021

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Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering

Physica status solidi. A, Applications and materials science, 2024-04

2024

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Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF07-4

2015

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Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1527-1539

2007

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TCAD-based design and verification of the components of a 200 V GaN-IC platform

Solid-state electronics, 2023-02, Vol.200, p.108496, Article 108496

2023

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Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE transactions on electron devices, 2024-08, p.1-7

2024

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Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4563-4569

2024

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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

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Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

IEEE electron device letters, 2020-12, Vol.41 (12), p.1754-1757

2020

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Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization

IEEE electron device letters, 2020-04, Vol.41 (4), p.577-580

2020

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Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

IEEE transactions on power electronics, 2021-05, Vol.36 (5), p.4927-4930

2021

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Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

IEEE electron device letters, 2020-04, Vol.41 (4), p.577-580

2020

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A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Solid-state electronics, 2023-12, Vol.210, p.108778, Article 108778

2023

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Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1765-1770

2018

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n - n Diodes: The Road to Reliable Vertical MOSFETs

Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

TCAD-based design and verification of the components of a 200 V GaN-IC platform

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

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