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Areal Geometric Effects of a ZnO Charge-Trap Layer on Memory Transistor Operations for Embedded-Memory Circuit Applications

IEEE electron device letters, 2017-09, Vol.38 (9), p.1263-1265

2017

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IEEE_Xplore

Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (18), p.4779-4786

2015

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Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-07, Vol.32 (4)

2014

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Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.128002-128002-3

2013

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Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3S), p.3-1-03CB01-5

2015

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Characteristics of laser-annealed ZnO thin film transistors

Thin solid films, 2010-03, Vol.518 (11), p.3022-3025

2010

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Transparent Flexible Zinc--Indium--Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05EB10-05EB10-4

2010

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Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2404-2411

2014

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IEEE_Xplore

High-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-11, Vol.32 (6)

2014

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Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

IEEE electron device letters, 2014-03, Vol.35 (3), p.357-359

2014

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IEEE_Xplore

Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-07, Vol.31 (4)

2013

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Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Scientific reports, 2015-01, Vol.5 (1), p.7884-7884, Article 7884

2015

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Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance

IEEE electron device letters, 2011-12, Vol.32 (12), p.1692-1694

2011

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IEEE_Xplore

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Solid-state electronics, 2015-09, Vol.111, p.153-160

2015

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Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator

Organic electronics, 2013-09, Vol.14 (9), p.2148-2157

2013

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Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

IEEE transactions on electron devices, 2014-01, Vol.61 (1), p.79-86

2014

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IEEE_Xplore

Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

Ceramics international, 2014-07, Vol.40 (6), p.7829-7836

2014

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Thickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-05, Vol.33 (3)

2015

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Characteristics of low-temperature annealed ZnO-TFTs

Journal of the Korean Physical Society, 2010, 56(1), , pp.404-408

2010

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Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-07, Vol.30 (4)

2012

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Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications

Ceramics international, 2013-04, Vol.39 (3), p.2561-2566

2013

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Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

ACS applied materials & interfaces, 2012-10, Vol.4 (10), p.5369-5374

2012

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Impacts of an Al2O3 capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014, p.121-123

2014

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Effect of aluminum and Indium composition on the bias-illumination-stress stability of solution-processed transparent Al-In-Zn-O thin-film transistors

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014, p.331-334

2014

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Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition

2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014, p.113-116

2014

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Areal Geometric Effects of a ZnO Charge-Trap Layer on Memory Transistor Operations for Embedded-Memory Circuit Applications

Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

Effect of Al concentration on Al-doped ZnO channels fabricated by atomic-layer deposition for top-gate oxide thin-film transistor applications

Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition

Characteristics of laser-annealed ZnO thin film transistors

Transparent Flexible Zinc--Indium--Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films

Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

High-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

Nonvolatile memory characteristics of thin-film transistors using hybrid gate stack composed of solution-processed indium-zinc-silicon oxide active channel and organic ferroelectric gate insulator

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

Thickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks

Characteristics of low-temperature annealed ZnO-TFTs

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

Impacts of an Al2O3 capping layer for the fully-patterned top-gate oxide thin-film transistors using solution-processed PVP/Al-Zn-Sn-O gate-stack structure

Effect of aluminum and Indium composition on the bias-illumination-stress stability of solution-processed transparent Al-In-Zn-O thin-film transistors

Effect of mid-annealing process on the device characteristics of the TFT using Al-doped ZnO active channels prepared by atomic layer deposition

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