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Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1606-1611

Chen, Baile

2017

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Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Applied physics letters, 2022-05, Vol.120 (21)

2022

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Design of InP-Based High-Speed Photodiode for 2- \mu m Wavelength Application

IEEE journal of quantum electronics, 2019-02, Vol.55 (1), p.1-8

2019

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Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

ACS applied materials & interfaces, 2020-04, Vol.12 (13), p.15414-15421

2020

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A Preclinical System Prototype for Focused Microwave Breast Hyperthermia Guided by Compressive Thermoacoustic Tomography

IEEE transactions on biomedical engineering, 2021-07, Vol.68 (7), p.2289-2300

2021

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Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

Journal of lightwave technology, 2018-09, Vol.36 (18), p.4033-4038

2018

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Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications

Photonics, 2021-01, Vol.8 (1), p.14

2021

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Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Optical and quantum electronics, 2022-05, Vol.54 (5), Article 286

2022

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Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Journal of lightwave technology, 2018-07, Vol.36 (13), p.2572-2581

2018

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Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate

IEEE journal of quantum electronics, 2019-08, Vol.55 (4), p.1-5

2019

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Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Equivalent Circuit Model of the RF Characteristics of Multi-Stage Infrared Photodetectors

Journal of lightwave technology, 2022-08, Vol.40 (15), p.5224-5230

Chen, Baile

2022

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Single-pixel p-graded-n junction spectrometers

Nature communications, 2024-02, Vol.15 (1), p.1773-1773, Article 1773

2024

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Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Applied physics letters, 2021-02, Vol.118 (8)

2021

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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

ACS photonics, 2020-02, Vol.7 (2), p.528-533

2020

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Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers

Optics express, 2017-10, Vol.25 (21), p.25183-25192

Chen, Baile

2017

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Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (21), p.2895

2023

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Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

IET optoelectronics, 2018-02, Vol.12 (1), p.2-4

2018

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High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Journal of semiconductors, 2022-01, Vol.43 (1), p.12303-72

2022

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Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \mu m

IEEE photonics technology letters, 2011-02, Vol.23 (4), p.218-220

2011

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Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells

Journal of physics. D, Applied physics, 2013-08, Vol.46 (31), p.315103-1-5

2013

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Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector

Electronics letters, 2012-09, Vol.48 (19), p.1230-1232

2012

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Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

IEEE access, 2021, Vol.9, p.60689-60694

2021

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Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Design of InP-Based High-Speed Photodiode for 2- \mu m Wavelength Application

Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

A Preclinical System Prototype for Focused Microwave Breast Hyperthermia Guided by Compressive Thermoacoustic Tomography

Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy

Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

Equivalent Circuit Model of the RF Characteristics of Multi-Stage Infrared Photodetectors

Single-pixel p-graded-n junction spectrometers

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \mu m

Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells

Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K

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