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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

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Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

Semiconductors (Woodbury, N.Y.), 2020-07, Vol.54 (7), p.811-816

2020

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Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

Semiconductors (Woodbury, N.Y.), 2019-07, Vol.53 (7), p.882-886

2019

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Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1542-1546

2017

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Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1324-1328

2019

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Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1442-1447

2018

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Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Journal of physics. D, Applied physics, 2022-02, Vol.55 (7), p.75107

2022

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Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Journal of applied physics, 2020-04, Vol.127 (16)

2020

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Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Semiconductor science and technology, 2018-12, Vol.33 (12), p.124019

2018

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Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.531-536

2021

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318-1323

2019

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Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1262-1265

2019

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Strained multilayer structures with pseudomorphic GeSiSn layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1584-1588

2016

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Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1657-1661

2016

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Fiber-optic temperature sensor based on low-coherence interferometry without scanning

Optik (Stuttgart), 2013-08, Vol.124 (15), p.1982-1985

2013

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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Materials science in semiconductor processing, 2018-03, Vol.75, p.143-148

2018

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318

2019

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Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1410-1414

2015

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Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1496-1499

2013

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Pulsed Ion-Beam Treatment of Germanium Implanted by Antimony Ions

Optoelectronics, instrumentation, and data processing, 2019-09, Vol.55 (5), p.423-430

2019

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Optical monitoring of technological parameters during molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1471-1475

2012

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Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Semiconductors (Woodbury, N.Y.), 2015-08, Vol.49 (8), p.1104-1110

2015

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Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands

Technical physics letters, 2012-09, Vol.38 (9), p.828-831

2012

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Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling

Semiconductors, 2022, Vol.56 (10), p.731

2022

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Optically active centers in Si/Si{sub 1-x}Ge{sub x}:Er heterostructures containing Er{sup 3+} ions

Semiconductors (Woodbury, N.Y.), 2009-07, Vol.43 (7)

2009

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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers

Strained multilayer structures with pseudomorphic GeSiSn layers

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Fiber-optic temperature sensor based on low-coherence interferometry without scanning

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Pulsed Ion-Beam Treatment of Germanium Implanted by Antimony Ions

Optical monitoring of technological parameters during molecular-beam epitaxy

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands

Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling

Optically active centers in Si/Si{sub 1-x}Ge{sub x}:Er heterostructures containing Er{sup 3+} ions

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